A Compact Model for SiC Schottky Barrier Diodes Based on the Fundamental Current Mechanisms

Abstract

We develop a complete compact model to describe the forward current, reverse current, and capacitance of SiC Schottky barrier diodes. The model is based on the fundamental current mechanisms of thermionic emission and tunneling, and is usable over a large range of voltages, temperatures, and for a large range of device parameters. We also demonstrate good agreement with measured data. Furthermore, the development of this model outlines a methodology for transforming a tunneling equation into a compact form without numerical integration-this methodology can potentially be applied to other device structures.

Resistor-to-Schottky barrier analytical model for ohmic contact test structures

“…Vertical links represent voltage-controlled current density sources (J v -V c ) flowing from the semiconductor across the interface to the metal at each node. This current density source representation was inspired by the analytical model for the SiC Schottky Barrier reported in [38]. The RSB model can also be referred to as a resistor-current density source network.…”

“…Pioneering carrier transport theories, first proposed in the 1960s, are still used in analysing contemporary Ohmic contacts [21,22,37]. Recently, these theories have been examined and refined to characterise the behaviour of modern 4H-SiC [38,39], Ga 2 O 3 Schottky barrier diodes [40] and junctionless FinFETs [41]. These enhanced theories incorporate image force-lowering effects and revisit the tunnelling equations to meet specific requirements, such as high electric fields in reverse bias for power electronic diodes [38][39][40].…”

“…Recently, these theories have been examined and refined to characterise the behaviour of modern 4H-SiC [38,39], Ga 2 O 3 Schottky barrier diodes [40] and junctionless FinFETs [41]. These enhanced theories incorporate image force-lowering effects and revisit the tunnelling equations to meet specific requirements, such as high electric fields in reverse bias for power electronic diodes [38][39][40]. The current density (J) across the M-S contact is not proportional to the voltage drop across the contact (V c ) [34][35][36].…”