A Combined Radar &amp; Lidar System Based on Integrated Photonics in Silicon-on-Insulator

Falconi, Fabio; Melo, Suzanne; Scotti, Filippo; Malik, Muhammad Wasif; Scaffardi, M.; Porzi, Claudio; Ansalone, Luigi; Ghelfi, Paolo; Bogoni, Antonella

doi:10.1109/jlt.2020.3023496

Cited by 19 publications

(9 citation statements)

References 19 publications

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“…A dual-band photonic radar operating in S and X bands was presented in [22], showcasing the system's real maritime operation with the inverse synthetic aperture radar (ISAR) technique. Additionally, a photonic-integrated combined radar and lidar system, based on Silicon-on-Insulator (SOI) technology, was reported in [23]. In response to the increasing interest in space applications, the evaluation of the photonic-based radar paradigm in this context is currently underway.…”

Section: Functionalities Enabled By Microwave Photonicsmentioning

confidence: 99%

Microwave photonics for space

Camponeschi,

Rinaldi,

Bogoni

2024

Next-Generation Optical Communication: Components, Sub-Systems, and Systems XIII

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Over the past few decades, the space industry has seen a profound transformation, leading to a redefinition of the business models of companies in the space sector. Among the various emerging technologies, photonics represents one of the largest fields of expansion, transforming sectors such as telecommunications, defense, navigation, remote sensing, and Earth and space observation. At the forefront of this technological transformation is integrated microwave photonics (MWP), a state-of-the-art solution that offers wide input bandwidth, management of high-frequency operations, and efficient distribution of radio frequency (RF) signals through Radio-over-Fiber (RoF) systems. These advantages, combined with inherent protection against electromagnetic interference (EMI) and low size weight and power consumption (SWaP), are a critical advantage in improving the performance of synthetic aperture radar (SAR) systems. This paper provides a brief introduction to microwave photonics for space applications, highlighting, through ongoing projects at our research laboratory, how it is gaining traction in the global market.

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Section: Functionalities Enabled By Microwave Photonicsmentioning

confidence: 99%

Microwave photonics for space

Camponeschi,

Rinaldi,

Bogoni

2024

Next-Generation Optical Communication: Components, Sub-Systems, and Systems XIII

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“…Benefiting from the maturity, low cost, and scalability of complementary metal-oxide semicondutor (CMOS) manufacturing DOI: 10.1002/lpor.202300642 driven by the microelectronics industry, silicon integrated photonics has enabled significant advances in telecom applications, [1,2] Lidar, [3] integrated photonic sensors, [4] and quantum computing [5,6] over the past decade. Today, silicon photonic integrated circuits have been demonstrated with a wide diversity of optical functions via hybrid integration with different materials, such as III-V-on-Si integrated lasers, Ge-on-Si photodiodes, high-speed modulators, and (de)multiplexers.…”

Section: Introductionmentioning

confidence: 99%

Low‐Temperature Sputtered Ultralow‐Loss Silicon Nitride for Hybrid Photonic Integration

Zhang,

Bi,

Harder

et al. 2023

Laser & Photonics Reviews

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Silicon‐nitride‐on‐insulator (Si3N4) photonic circuits have seen tremendous advances in many applications, such as on‐chip frequency combs, Lidar, telecommunications, and spectroscopy. So far, the best film quality has been achieved with low pressure chemical vapor deposition (LPCVD) and high‐temperature annealing (1200°C). However, high processing temperatures pose challenges to the cointegration of Si3N4 with pre‐processed silicon electronic and photonic devices, lithium niobate on insulator (LNOI), and Ge‐on‐Si photodiodes. This limits LPCVD as a front‐end‐of‐line process. Here, ultralow‐loss Si3N4 photonics based on room‐temperature reactive sputtering is demonstrated. Propagation losses as low as 5.4 dB m−1 after 400°C annealing and 3.5 dB m−1 after 800°C annealing are achieved, enabling ring resonators with highest optical quality factors of > 10 million and an average quality factor of 7.5 million. To the best of the knowledge, these are the lowest propagation losses achieved with low temperature Si3N4. This ultralow loss enables the generation of microresonator soliton frequency combs with threshold powers of 1.1 mW. The introduced sputtering process offers full complementary metal oxide semiconductor (CMOS) compatibility with front‐end silicon electronics and photonics. This could enable hybrid 3D integration of low loss waveguides with integrated lasers and lithium niobate on insulator.

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“…Silicon photonics has greatly pushed the development of integrated optics and provided an excellent technique to make on-chip optical circuits available, where the application fields of optical communications, optical interconnects, and data centers are benefited significantly [1][2][3][4][5]. Silicon-on-insulator (SOI), a vital and promising platform for silicon photonics, has attracted tremendous interest to realize compact, high-yield, and energy-efficient photonic integrated circuits (PICs) due to its high refractive-index-contrast and complementary metal-oxide-semiconductor (CMOS) processing [6][7][8][9]. Based on such a material platform, the typical size of a single-mode silicon waveguide is only 220 nm × 450 nm, which poses a huge challenge for efficient light coupling between optical fiber and silicon waveguide since the mode field diameter (MFD) of single-mode fiber (lensed fiber) is about 10 µm (4 µm) [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

A 60 μm-Long Fiber-to-Chip Edge Coupler Assisted by Subwavelength Grating Structure with Ultralow Loss and Large Bandwidth

Xiao

Dong

et al. 2022

Photonics

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Efficient fiber-to-chip coupling is a key issue in the field of integrated optics and photonics due to the lack of on-chip silicon light source at present. Here, we propose a silicon-based fiber-to-chip edge coupler by use of subwavelength grating (SWG)-assisted structure. The key conversion region is composed of a trident-shaped SWG in the center and two matched strip waveguides on both sides. To achieve high mode match between fiber mode and silicon waveguide mode and to realize low-loss transmission on-chip, we have divided the conversion region into three parts and determined their optimum dimensions. From results, the total device length is only 60 μm from input fiber to output silicon waveguide, and the insertion loss (IL) is as low as 0.23 dB at the wavelength of 1.55 μm. For the working bandwidth, its value can be enlarged to 240 nm (or 390 nm) by keeping IL < 1 dB (or 1.5 dB), which is quite promising for on-chip broadband devices. Based upon these advantages, we hope such a device could be applied in light coupling between optical fiber and on-chip silicon waveguide.

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A Combined Radar & Lidar System Based on Integrated Photonics in Silicon-on-Insulator

Cited by 19 publications

References 19 publications

Microwave photonics for space

Microwave photonics for space

Low‐Temperature Sputtered Ultralow‐Loss Silicon Nitride for Hybrid Photonic Integration

A 60 μm-Long Fiber-to-Chip Edge Coupler Assisted by Subwavelength Grating Structure with Ultralow Loss and Large Bandwidth

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