2003
DOI: 10.1016/s0022-0248(02)01945-0
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A combined carbon and oxygen segregation model for the LEC growth of SI GaAs

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Cited by 13 publications
(11 citation statements)
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“…This clearly indicates that transport of reaction products in the fluid phases and/or reaction kinetics at phase boundaries cannot be neglected. Therefore, a transport model has been developed [28] which includes carbon and oxygen as control species according to the thermochemical model and system-releated parameters like area and thickness of the boron oxide layer acting as a diffusion barrier and its transport properties.…”
Section: Article In Pressmentioning
confidence: 99%
“…This clearly indicates that transport of reaction products in the fluid phases and/or reaction kinetics at phase boundaries cannot be neglected. Therefore, a transport model has been developed [28] which includes carbon and oxygen as control species according to the thermochemical model and system-releated parameters like area and thickness of the boron oxide layer acting as a diffusion barrier and its transport properties.…”
Section: Article In Pressmentioning
confidence: 99%
“…The control of carbon concentration during vapor pressure-controlled Czochralski (VCz) growth [1], as well as during conventional LEC [2] growth of GaAs crystals, is of crucial importance for achieving the desired electrical crystal parameters. Today, the carbon concentration is commonly adjusted empirically by maintaining a certain CO partial pressure in the growth atmosphere [1,2].…”
Section: Introductionmentioning
confidence: 99%
“…Today, the carbon concentration is commonly adjusted empirically by maintaining a certain CO partial pressure in the growth atmosphere [1,2]. A critical point of this procedure is that it is difficult to transfer the parameters empirically found for a given experimental geometry to another, e.g., to different chamber, crystal, and crucible sizes.…”
Section: Introductionmentioning
confidence: 99%
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