A Chemically Amplified Fullerene‐Derivative Molecular Electron‐Beam Resist

Gibbons, Francis P.; Zaid, Hasnah Mohd; Manickam, M.; Preece, Jon A.; Palmer, Richard E.; Robinson, Alex P. G.

doi:10.1002/smll.200700324

Cited by 34 publications

(24 citation statements)

References 24 publications

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“…These are highly improved when compared with the e-beam dose values reported in the literature for other nCARs, such as AR-N7500, 17,19 maN2400, 17,20 HSQ, 21 and Fullerol. 22 …”

Section: Contrast Analysismentioning

confidence: 99%

“…These materials show a very high etch resistance to the silicon substrate when compared to conventional organic resists. [22][23][24][25][26][27] The MAPDST-MMA copolymer was also tested under an etch recipe of CHF 3 ∕O 2 with a flow rate of 22.5∕2.5 sccm at a pressure of 80 mTorr with an RF power of 150 W for 1 min. In this case, the etch ratio for the MAPDST-MMA copolymer to the silicon dioxide was observed as 0.36∶1, which is also comparable to conventional organic resists under the same conditions.…”

Section: Etch Resistancementioning

confidence: 99%

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Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography

Singh

Satyanarayana

Batina³

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Although extreme ultraviolet (EUV) lithography is being considered as one of the most promising nextgeneration lithography techniques for patterning sub-20 nm features, the development of suitable EUV resists remains one of the main challenges confronting the semiconductor industry. The goal is to achieve sub-20 nm line patterns having low line edge roughness (LER) of <1.8 nm and a sensitivity of 5 to 20 mJ∕cm 2 . The present work demonstrates the lithographic performance of two nonchemically amplified (n-CARs) negative photoresists, MAPDST homopolymer and MAPDST-MMA copolymer, prepared from suitable monomers containing the radiation sensitive sulfonium functionality. Investigations into the effect of several process parameters are reported. These include spinning conditions to obtain film thicknesses <50 nm, baking regimes, exposure conditions, and the resulting surface topographies. The effect of these protocols on sensitivity, contrast, and resolution has been assessed for the optimization of 20 nm features and the corresponding LER/line width roughness. These n-CARs have also been found to possess high etch resistance. The etch durability of MAPDST homopolymer and MAPDST-MMA copolymer (under SF 6 plasma chemistry) with respect to the silicon substrate are 7.2∶1 and 8.3∶1, respectively. This methodical investigation will provide guidance in designing new resist materials with improved efficiency for EUVL through polymer microstructure engineering.

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“…These are highly improved when compared with the e-beam dose values reported in the literature for other nCARs, such as AR-N7500, 17,19 maN2400, 17,20 HSQ, 21 and Fullerol. 22 …”

Section: Contrast Analysismentioning

confidence: 99%

Section: Etch Resistancementioning

confidence: 99%

Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography

Singh

Satyanarayana

Batina³

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

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“…Although the factors determining the RLS trade-off relationship are still under investigation, 25,26 it has been shown that CARs based on molecular 27,28 rather than polymeric resists have the potential for lower line width roughness (LWR) 29 and higher resolution while maintaining good sensitivity. We have previously developed a series of chemically amplied e-beam resists based on fullerene derivatives containing polyethyleneglycol side chains, 30,31 which have shown high sensitivity, high resolution, good LWR and excellent etch durability.…”

mentioning

confidence: 99%

Chemically amplified phenolic fullerene electron beam resist

et al. 2014

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Molecular resist materials for electron beam lithography have received significant interest as a route to reducing line width roughness and improving resolution. However, they have often required the use of hazardous solvents in their processing. A new family of fullerene based negative tone chemically amplified e-beam resists, using industry compatible solvents, has been developed. A sensitivity of $40 mC cm À2 was achieved at 20 keV. Isolated features with a line width of 13.6 nm as well as $20 nm lines on a 36 nm pitch have been patterned, whilst one variant has demonstrated resolution to 15 nm halfpitch at slightly higher dose.

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“…Molecular and polymeric fullerene derivatives have been proposed for chemicallyamplified electron-beam resist applications [219,220]. Fullerene derivatives containing polyethyleneglycol side chains exhibit high sensitivity and resolution, good lower line width roughness, and excellent etch durability [221]. However, halogenated solvents are required for the spincasting and development of these resists, and such solvents are not acceptable (safe) for commercial use.…”

Section: E1 Catalytic Activitymentioning

confidence: 99%

Solid State Physicochemical Properties and Applications of Organic and Metallo- Organic Fullerene Derivatives

Mitsari¹,

Romanini²,

Zachariah³

et al. 2016

COC

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Abstract:We review the fundamental properties and main applications of organic derivatives and complexes of fullerenes in the solid-state form. We address in particular the structural properties, in terms of crystal structure, polymorphism, orientational transitions and morphology, and the electronic structure and derived properties, such as chemical activity, electrical conduction mechanisms, optical properties, heat conduction and magnetism. The last two sections of the review focus on the solid-state optoelectronic and electrochemical applications of fullerene derivatives, which range from photovoltaic cells to field-effect transistors and photodetectors on one hand, to electron-beam resists, electrolytes and energy storage on the other.

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A Chemically Amplified Fullerene‐Derivative Molecular Electron‐Beam Resist

Cited by 34 publications

References 24 publications

Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography

Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography

Chemically amplified phenolic fullerene electron beam resist

Solid State Physicochemical Properties and Applications of Organic and Metallo- Organic Fullerene Derivatives

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