A Broadband Integrated Class-J Power Amplifier in GaAs pHEMT Technology

Alizadeh, Amirreza; Medi, Ali

doi:10.1109/tmtt.2016.2552167

Cited by 38 publications

(13 citation statements)

References 13 publications

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“…According to class-J power amplifiers theory, the drain efficiency is up to 78.5% as ideal class-B. [15][16][17][18][19][20] Their voltage and current waveforms are half sine waves. The second harmonic impedance only has a reactance value.…”

Section: Theoretical Analysismentioning

confidence: 99%

A broadband class‐F/J hybrid power amplifier

Guo

Cheng

et al. 2020

Micro & Optical Tech Letters

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This article proposes a new broadband high-efficiency hybrid power amplifier (PA) design methodology that combines a class-J PA with a class-F PA using GaN HEMT CGH40010F. Multifrequency harmonic control method is employed to achieve harmonic matching network for increasing the bandwidth of the PA. In order to validate the effectiveness of the proposed method, a 1 to 2.8 GHz broadband class F/J PA is designed and fabricated. The simulation and measurement results show that the saturated output power is 40 to 42 dBm, the gain is over 10 dB and the drain efficiency is 65% to 71% at the frequency of 1 to 2.8 GHz.

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Section: Theoretical Analysismentioning

confidence: 99%

A broadband class‐F/J hybrid power amplifier

Guo

Cheng

et al. 2020

Micro & Optical Tech Letters

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“…In class-J PA higher order even harmonic than the second harmonic does not exist while the third harmonic is assumed short. Class-J mode results in 45 o phase shift between the drain current and voltage of the PA which in turn enhances the performance of the PA in the scale of classes AB and B PAs [7]. The class-J drain current and voltage waveforms on the transistor intrinsic nodes are sine waves consisting of even harmonics.…”

Section: Class-j Theorymentioning

confidence: 99%

“…Class-J GaN HEMT PAs using packaged transistor have been reported in [2]- [6]. MMIC GaAs pHEMT with chip dimensions of 1.57 x 1.29 mm 2 was reported in [7] while MMIC GaN HEMT (gallium nitride high electron mobility transistor) with 2 x 2 mm 2 dimension was reported in [8]. However the reported PAs in [2]- [8] have operational frequency below 8GHz and do not have an NFC.…”

Section: Introductionmentioning

confidence: 99%

53 to 56GHz MMIC Non Foster Enhanced Class J GaAs pHEMT Power Amplifier

Akwuruoha¹,

Hu²

2017

Fifth International Conference on Advances in Bio-Informatics, Bio-Technology and Environmental Engineering - ABBE 2017

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Abstract-Non-Foster circuits are widely used to enhance the bandwidth of microwave circuits owing to its ability to provide the negative impedance required to cancel transistor parasitic capacitance. In this paper, a 53 to 56 GHz MMIC (monolithic microwave integrated circuit) non-Foster enhanced class-J GaAs pHEMT (gallium arsenide pseudo high electron mobility transistor) power amplifier (PA) is proposed. The non-Foster circuit (NFC) is used to enhance the PA output power and gain. The NFC and PA were designed with WIN semiconductor's P10-10 process GaAs pHEMT with periphery of 150 μm. The transistor was biased with drain supply voltage of 2V for the NFC and 3V for the PA with respective quiescent drain-to-source current (I DSQ ) of 2mA and 3mA respectively. The PA operates from 53GHz to 56GHz with center frequency of 54.5GHz. The NFC effective negative capacitance stood at -0.15pF at 54.5GHz. Small and large signal simulations result of the PA with and without NFC were obtained and compared at the center frequency The NFC MMIC PA measures 0.9 x 1.0 mm 2 (0.9 mm 2 ). Simulation results indicate that the PA with NFC demonstrates higher output power of 17dBm, gain of 8dB and 43% PAE than the one without NFC with 15.5dBm output power, 41.5% PAE and 6.5 dB power gain.

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“…An analytical expression of C in is extracted using a curve-fitting algorithm (the dashed line in Figure 6) as follows: The gate voltage waveform shaping in the input, which requires appropriate matchings at harmonic frequencies, can affect the PA characteristics. 33 But in an X-band PA, considering the high operating frequency, and relatively large input capacitor of the power GaN HEMT, the matching network at harmonic frequencies cannot easily be realized using the approach performed in Refs. [34][35][36].…”

Section: Cha Rac Teri Za Ti On Of T He Ga N H Emt T Ran S Is T Ormentioning

confidence: 99%

Efficiency enhancement by employing the transistor nonlinear capacitors effects in a 6W hybrid X-band Class-J power amplifier

Forouzanfar

Joodaki

2017

Int J RF Microw Comput Aided Eng

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This article presents the design and fabrication of a 6 W X‐band hybrid Class‐J power amplifier (PA) based on a bare die GaN on SiC HEMT by accurate implementing the transistor nonlinear capacitor effects. The transistor input capacitor is precisely modelled and its nonlinearity effects on Class‐J performance is studied for the first time. It is shown that the harmonic generation property of the nonlinear input capacitor, especially at the second harmonic, can be of benefit to shape the transistor gate voltage as a quasi‐half wave sinusoidal waveform and consequently, it can improve the power added efficiency (PAE). A complete 3D thermal model of the power transistor is developed using ANSYS software and it is calibrated based on the thermal measured data. The PA achieves 13 dB average power gain over the frequency range of 8.8‐9.6 GHz. The drain efficiency and PAE are about 67% and 58% at 9.2 GHz, respectively.

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A Broadband Integrated Class-J Power Amplifier in GaAs pHEMT Technology

Cited by 38 publications

References 13 publications

A broadband class‐F/J hybrid power amplifier

A broadband class‐F/J hybrid power amplifier

53 to 56GHz MMIC Non Foster Enhanced Class J GaAs pHEMT Power Amplifier

Efficiency enhancement by employing the transistor nonlinear capacitors effects in a 6W hybrid X-band Class-J power amplifier

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