bit line to a data bus-line. In the 128K ROM, all bit lines and CDLs are precharged. When it is accessed, only one CDL, including the selected bit, in the system i s discharged by 4) Plasma etching of the CVD Si3N4 film and 8 ion -.nology for 128K EB-ROM", 10th Solid State Devices Conf. Arai E., et. al., "Direct Electron-Beam Data Writing Tech-(Tokyo).
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