A 64Mb Chain FeRAM with Quad-BL Architecture and 200MB/s Burst Mode

Hoya, K.; Takashima, D.; Shiratake, S.; Ogiwara, R.; Miyakawa, T.; Shiga, H.; Doumae, Sumiko; Ohtsuki, Satoshi; Kumura, Y.; Shuto, S.; Ozaki, T.; Yamaguchi, Koji; Kunishima, I.; Nitayama, A.; Fujii, Shosuke

doi:10.1109/isscc.2006.1696078

Cited by 18 publications

(9 citation statements)

References 3 publications

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“…Ferro-Electric memory (FeRAM) functions by storing a charge in a ferroelectric layer [18][19][20]. FeRAM is similar to DRAM in terms of performance and combines high endurance with non-volatility.…”

Section: A Characteristics Of Future Memory Technologiesmentioning

confidence: 99%

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Evaluation of emerging memory technologies for HPC, data intensive applications

Suresh

Cicotti

Carrington

2014

2014 IEEE International Conference on Cluster Computing (CLUSTER)

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DRAM technology has several shortcomings in terms of performance, energy efficiency and scaling. Several emerging memory technologies have the potential to compensate for the limitations of DRAM when replacing or complementing DRAM in the memory sub-system. In this paper, we evaluate the impact of emerging technologies on HPC and data-intensive workloads modeling a 5-level hybrid memory hierarchy design. Our results show that 1) an additional level of faster DRAM technology (i.e. EDRAM or HMC) interposed between the last level cache and DRAM can improve performance and energy efficiency, 2) a non-volatile main memory (i.e. PCM, STTRAM, or FeRAM) with a small DRAM acting as a cache can reduce the cost and energy consumption at large capacities, and 3) a combination of the two approaches, which essentially replaces the traditional DRAM with a small EDRAM or HMC cache between the last level cache and the non-volatile memory, can grant capacity and improved performance and energy efficiency. We also explore a hybrid DRAM-NVM design with a partitioned address space and find that this approach is marginally beneficial compared to the simpler 5-level design. Finally, we generalize our analysis and show the impact of emerging technologies for a range of latency and energy parameters.

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Section: A Characteristics Of Future Memory Technologiesmentioning

confidence: 99%

“…The HMC characteristics were obtained from experimental data obtained on a prototype [6]. The characteristics of PCM and STTRAM are obtained from the 2013 ITRS report [8], whereas characteristics of FeRAM were obtained from published literature [18]. The characteristics of all memory technologies used in our study are summarized in Table 1.…”

Section: Lcnvmmentioning

confidence: 99%

Evaluation of emerging memory technologies for HPC, data intensive applications

Suresh

Cicotti

Carrington

2014

2014 IEEE International Conference on Cluster Computing (CLUSTER)

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“…As the magnetization direction of the two FM layers is either in parallel or anti-parallel, a MTJ shows two different resistance values R P and R AP . For practical applications, the magnetization direction of one FM layer is pinned as reference and that of the other ferromagnetic layer is free to be switched to store binary state [5,9].…”

Section: Stt Based Magnetic Tunnel Junction (Stt-mtj)mentioning

confidence: 99%

“…However, the high standby power due to the increasing leakage currents becomes a more and more critical issue as the fabrication node shrinks down to 90nm or below [3]. A number of non-volatile storage technologies such as Magnetic RAM (MRAM) [4], Ferroelectric RAM (FRAM) [5], Phase-Change RAM (PCRAM) [6] and Resistive RAM (RRAM) [7] are under investigation by both the industries and academics.…”

Section: Introductionmentioning

confidence: 99%

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High Performance SoC Design Using Magnetic Logic and Memory

Zhao

Torres

Cargnini

et al. 2012

VLSI-SoC: Advanced Research for Systems on Chip

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Abstract.As the technolody node shrinks down to 90nm and below, high standby power becomes one of the major critical issues for CMOS highspeed computing circuits (e.g. logic and cache memory) due to the high leakage currents. A number of non-volatile storage technologies, such as FRAM, MRAM, PCRAM and RRAM, are under investigation to bring the non-volatility into the logic circuits and then eliminate completely the standby power issue. Thanks to its infinite endurance, high switching/sensing speed and easy integration on top of CMOS process, MRAM is considered as the most promising one. Numerous logic circuits based on MRAM technology have been proposed and prototyped in the last years. In this paper, we present an overview and current status of these logic circuits and discuss their potential applications in the future from both physical and architectural points of view.

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Future Paths of Innovation

Salvo¹

2009

Silicon Non‐Volatile Memories

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A 64Mb Chain FeRAM with Quad-BL Architecture and 200MB/s Burst Mode

Cited by 18 publications

References 3 publications

Evaluation of emerging memory technologies for HPC, data intensive applications

Evaluation of emerging memory technologies for HPC, data intensive applications

High Performance SoC Design Using Magnetic Logic and Memory

Future Paths of Innovation

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