1980
DOI: 10.1109/isscc.1980.1156099
View full text
|
|
Share

Abstract: THIS PAPER WILL REPORT on the application of double-level polysilicon' and NMOS/CMOS process technologies to the design of a 64Kb fully static RAM, with 80ns typical access time. The RAM dissipates 300mW and 75mW in active and standby mode, respectively.The RAM utilizes N-well CMOS technology3 with Nt-doped polysilicon-gates in both Nand P-MOSFETs. Boron doping into polysilicon-gates of P-MOSFETs in the process step of boron implantation to form source/drain is avoided by a two-step photolithography technique…

expand abstract