1979
DOI: 10.1109/isscc.1979.1155988
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Abstract: A 6 4 K x l b MOS dynamic RAM fabricated by a triple poly process will be described.The memory cell structure is shown in Figures 1 and 2. The memory capacitor is formed by two polysilicon plates (poly 1 and poly 2) separated by a thin dielectric layer. The transfer switch is a single poly device (poly 3) and is thus self-aligned. The drain of this device is connected to the poly 1 plate of thc capacitor by a buried contact and the source is connected to the metal bit line by a conventional contact. The poly …

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