THE CONTINUED NEED for higher density, higher performance erasable proms (EPROMs) has been established by the evolution of faster, more dense microprocessors; and their dependence on convenient program storage memories. This need was first served by the 2Kb FAMOS P-channel floating gate EPROM"2, implemented by a two-transistor cell. The second generation 1C-channel microprocessors were served by the 8Kb and 16Kb314, N-channel MOS stacked gate EPROMs which used a one transistor cell.With the arrival of another…
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