1980
DOI: 10.1109/isscc.1980.1156041
View full text
|
|
Share

Abstract: THE CONTINUED NEED for higher density, higher performance erasable proms (EPROMs) has been established by the evolution of faster, more dense microprocessors; and their dependence on convenient program storage memories. This need was first served by the 2Kb FAMOS P-channel floating gate EPROM"2, implemented by a two-transistor cell. The second generation 1C-channel microprocessors were served by the 8Kb and 16Kb314, N-channel MOS stacked gate EPROMs which used a one transistor cell.With the arrival of another…

expand abstract