1983
DOI: 10.1109/isscc.1983.1156482
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Abstract: lnmos Corp. Colorado Springs, COAN 8K X 8 EEPROM with internal high voltage generation for 5-volt-only operation, will be discussed. Double-poly, N-channel silicon gate Nitrox technology has been used to achieve a very small cell area. External interface hardware is eliminated for most applications by an internal programlerase controller. Latched program/erase commands free the system from waiting. Parallel row programming results in a 64 times decrease in programming time, compared to other EEPROMs, and prov…

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