A 52% Peak Efficiency > 1-W Isolated Power Transfer System Using Fully Integrated Transformer With Magnetic Core

Trending IC design directions in 2022

“…Soon after, 6-μm-thick gold winding for both the primary and the second coils, with 20-μm polyimide between them to provide >5 kV isolation rating, are implemented in Ref. [223] and an AC-coupled LC tank oscillator with the transformer resonates at 180 MHz, transferring a maximum output power of 0.8 W. But the peak efficiency of the converter is lower than 34% because Q of the micro-transformer is only 6.8 at 200 MHz. A high-performance integrated transformer with a magnetic-core achieving a Q of 15.8 and an inductance of 130 nH is demonstrated in Ref.…”

“…Some converters use the LC tank oscillator adopted in Ref. [223,226] or the leakage-inductance-resonant fly-back topology proposed in Ref. [225], the common-mode voltage of primary coil V CM_PRI suffers from large and quick fluctuations so as to a high radiation is caused by large common-mode current I CM across the isolation barrier.…”

“…Recently, low-cost circuit techniques to reduce EMI at the source are demonstrated in Refs. [223,224,227]. For example, frequency hopping technique can be employed to suppress I CM [223] , the converter meets the CISPR22 Class-B standard with a 6.4 dB margin at 500 mW output power on a twolayers PCB without any stitching capacitor, but it will greatly increase the circuit complexity.…”

“…[223,224,227]. For example, frequency hopping technique can be employed to suppress I CM [223] , the converter meets the CISPR22 Class-B standard with a 6.4 dB margin at 500 mW output power on a twolayers PCB without any stitching capacitor, but it will greatly increase the circuit complexity. Besides, the frequency hopping circuit cannot operate in full PWM duty cycle, and thus difficult to meet the standard under heavy load.…”

A High Voltage Multi-Purpose On-the-fly Reconfigurable Half-Bridge Gate Driver for GaN HEMTs in 0.18-μm HV SOI CMOS Technology

“…a) Power SiP (Lee et al, 2002) b) Isolated power transfer SiP (Lee et al, 2002) Figure 0.1 Power SiP in the literature Power electronic circuits, occupying a large portion of the volume of a power supply, have been partially shrunk by introducing power semiconductor modules (Lee et al, 2002). Other integrated components such as inductors, transformers, capacitors and control circuits require each a dedicated technology (Thomas et al, 2018;Zhuo et al, 2019;Jia & Gu, 2018;Wang et al, 2018). The sub-system integration thus leads to a heterogeneous system or system-in-package (SiP) as illustrated in Figure 0.1.…”