This letter presents a V‐band phase‐locked loop (PLL) that employs mutual injection‐locking voltage controlled oscillator (VCO) and zero blind zone phase frequency detector (PFD) to enhance phase noise performance. This architecture is physically implemented in 40nm CMOS process with a die area of 0.7 mm2. The silicon results demonstrate an in‐band phase noise of −90dBc/Hz at 500 kHz offset and −92dBc/Hz at 1MHz offset with 2.5 MHz bandwidth. The PLL draws 40.8 mA current (including output buffer) from a 1.2 V power supply while operating at 60.8 GHz. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:278–283, 2017