A 5 MeV RBS microprobe for materials analysis in the semiconductor industry

Klody, G.M.; Schroeder, J.B.; Ferry, J.A.; Pollock, Thomas J.; Adams, Edward N.

doi:10.1016/0168-583x(91)95008-2

Cited by 7 publications

(3 citation statements)

References 5 publications

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“…Most labs use their microprobes for analytical applications and all of the ion beam analysis techniques have now been applied to nuclear microprobe analysis. 156,157 Some ion beam analysis techniques have actually been initially used on the microprobes, including transmission ion microscopy, elastic scattering analysis, and ion beam induced luminescence.…”

Section: Microbeamsmentioning

confidence: 99%

Ion beams in silicon processing and characterization

Chason

Picraux

Poate

et al. 1997

Journal of Applied Physics

262

106

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General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that severe challenges for two-dimensional characterization remain. The breadth of ion beams in the semiconductor industry is illustrated by the successful use of focused beams for machining and repair, and the development of ion-based lithographic systems. This suite of ion beam processing, modeling, and analysis techniques will be explored both from the perspective of the emerging science issues and from the technological challenges.

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Section: Microbeamsmentioning

confidence: 99%

Ion beams in silicon processing and characterization

Chason

Picraux

Poate

et al. 1997

Journal of Applied Physics

262

106

View full text Add to dashboard Cite

show abstract

“…Table 4 OMCTS + O2 Insulators, 50 keV Microbeam RBS was performed with an NEC model 5SDH RBS Spectrometer. The system uses singly-charged He ions accelerated to 1.5 MeV and has a current density of 10 nA over a nominal beam diameter of 20 p [9]. Data were collected at a 160" scattering angle, and SCATT software was used for data analysis.…”

Section: Measurements and Resultsmentioning

confidence: 99%

Electrical and Chemical Characterization of FIB-Deposited Insulators

Campbell

Tanner

Soden

et al. 1997

International Symposium for Testing and Failure Analysis

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The electrical and chemical properties of insulators produced by codeposition of siloxane compounds or TEOS with oxygen in a focused ion beam (FIB) system were investigated. Metal-insulator-metal capacitor structures were fabricated and tested. Specifically, leakage current and breakdown voltage were measured and used to calculate the effective resistance and breakdown field. Capacitance measurements were performed on a subset of the structures. It was found that the siloxanebased FIB-insulators had superior electrical properties to those based on TEOS. Microbeam Rutherford backscattering spectrometry analysis and Fourier transform infrared spectroscopy were used to characterize the films and to help understand the differences in electrical behavior as a function of gas chemistry and deposition conditions. Finally, a comparison is made between the results presented here, previous results for FIB-deposited insulators, and typical thermally-grown gate oxides and interlevel dielectric Si02 insulators.

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“…The system uses singly-charged He ions accelerated to 1.5 MeV and has a current density of 10 nA over a nominal beam diameter of 20 p [9]. Data were collected at a 160" scattering angle, and SCATT software was used for data analysis.…”

Section: Electrical Characterizationmentioning

confidence: 99%

Electrical and chemical characterization of FIB-deposited insulators

Campbell¹,

Tanner²,

Soden

et al. 1997

View full text Add to dashboard Cite

The electrical and chemical properties of insulators produced by codeposition of siloxane compounds or TEOS with oxygen in a focused ion beam (FIB) system were investigated. Metal-insulator-metal capacitor structures were fabricated and tested. Specifically, leakage current and breakdown voltage were measured and used to calculate the effective resistance and breakdown field. Capacitance measurements were performed on a subset of the structures. It was found that the siloxanebased FIB-insulators had superior electrical properties to those based on TEOS.Microbeam Rutherford backscattering spectrometry analysis and Fourier transform infrared spectroscopy were used to characterize the films and to help understand the differences in electrical behavior as a funcGon of gas chemistry and deposition conditions. Finally, a comparison is made between the results presented here, previous results for FIB-deposited insulators, and typical thermally-grown gate oxides and interlevel dielectric SiOz insulators.

show abstract

A 5 MeV RBS microprobe for materials analysis in the semiconductor industry

Cited by 7 publications

References 5 publications

Ion beams in silicon processing and characterization

Ion beams in silicon processing and characterization

Electrical and Chemical Characterization of FIB-Deposited Insulators

Electrical and chemical characterization of FIB-deposited insulators

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