A 5.8-GHz VCO with CMOS-compatible MEMS inductors

Tseng, Sheng-Hsiang; Hung, Ying-Jui; Juang, Ying‐Zong; Lu, Michael S.-C.

doi:10.1016/j.sna.2006.12.014

Cited by 47 publications

(29 citation statements)

References 11 publications

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“…8 and 9 that the used inductors with the trapezoid shaped (a=30 μm and b=40 μm) cross-section of the Ag coils, t of 30 μm, and the coil conductivity of 70% of Ag bulk value exhibit L of 8.2 nH, Q max of 35.5 near 750 MHz, and SRF of 5.14 GHz. These results are comparable to those reported in recent literature for various types of MEMS inductors developed using more complex fabrication processes [10][11][12][13][14]. The larger conductivity of the coil, thus smaller resistance of the coil resulted in the larger Q effects during high-frequency operation.…”

Section: Resultssupporting

confidence: 87%

“…In recent years, researchers have realized various highquality factor (Q) and self-resonant frequency (SRF) three-dimensional (3D) inductors using the complicated microelectromechanical systems (MEMS) technique [10][11][12][13][14]. Microinductors fabricated using MEMS techniques have Q of 6 to 55 at 1 GHz and L of 1.17 to 1.88 nH, and exhibit SRF of 2 to 10 GHz.…”

Section: Introductionmentioning

confidence: 99%

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Analytical estimation of high-frequency properties of RF micro-inductors prepared by direct-write techniques

et al. 2007

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In this work, the high-frequency characteristics of micron size, square spiral-type RF thin film air-core inductors prepared by direct-write supersonic jet deposition of laser ablated nanoparticle were estimated by a software package. The important parameters that are determined by direct-write process, such as the materials, the cross-section shape, the thickness, and the conductivity of the coil, were varied systematically to estimate the trend of the inductors' performances. The area dimensions of RF inductors utilized and the number of coil turns were 1.3 mm×1.3 mm and 3, respectively. The 96 wt% Al 2 O 3 , SiO 2 -coated Al 2 O 3 , and SiO 2 -coated Si wafers were used as the substrate material. The high-frequency characteristics of the inductance (L) and quality factor (Q) of the utilized inductors were simulated using a Maxwell three-dimensional field simulator (HFSS 8.5), which employs the finite element method. The used inductors, which have silver metal (Ag) coils, the trapezoid shaped cross-section of the coil, the coil thickness of 30 μm, and the coil conductivity of 70% of Ag bulk value, exhibit L of 8 to 9 nH. They also exhibit a maximum Q of 35.5 near the frequency of 750 MHz and a selfresonant frequency of 5.14 GHz. The simulated highfrequency data of the inductors were agreed well with those obtained from the equivalent circuit model of the utilized inductors.

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Section: Resultssupporting

confidence: 87%

Section: Introductionmentioning

confidence: 99%

Analytical estimation of high-frequency properties of RF micro-inductors prepared by direct-write techniques

et al. 2007

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show abstract

“…In recent years, researchers have realized various high-Q and self-resonant frequency (SRF) 3D solenoid inductors using the complicated microelectromechanical systems (MEMS) technique [10][11][12][13][14]. Microinductors fabricated based on MEMS technique have Q of 6-55 at 1 GHz and exhibit the SRF of 2-10 GHz and L of 1.17-1.88 nH.…”

Section: Introductionmentioning

confidence: 99%

Microfabrication of solenoid-type RF SMD chip inductors with an Al2O3 core

Kim

Jung

Park

et al. 2008

Current Applied Physics

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“…2(c), an isotropic dry etch using SF 6 and O 2 is performed to remove the silicon between the hot and the cold regions of polysilicon for reducing thermal conduction through the substrate. The foregoing post-CMOS micromachining steps have been verified previously for fabrication of a CMOS-compatible MEMS VCO [8]. The measured results show good reliability and compatibility with the standard CMOS process.…”

Section: Device Fabricationmentioning

confidence: 67%

A CMOS MEMS thermal sensor with high frequency output

Tseng

Fang

et al. 2008

2008 IEEE Sensors

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Abstract-This work presents the design and characterization of a CMOS-integrated thermal sensor that features a novel oscillator-based sensing interface to achieve a high thermoelectric sensitivity. The thirty pairs of thermocouples are made of n + /p + polysilicon of a standard 0.18-μm CMOS to produce a large thermoelectric voltage. The produced thermoelectric voltage is used to control the bias current of a high-frequency oscillator circuit and causes a shift in the output frequency. Experimental result indicates the 544-MHz oscillator has a temperature sensitivity of 46.3 kHz/°C.

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A 5.8-GHz VCO with CMOS-compatible MEMS inductors

Cited by 47 publications

References 11 publications

Analytical estimation of high-frequency properties of RF micro-inductors prepared by direct-write techniques

Analytical estimation of high-frequency properties of RF micro-inductors prepared by direct-write techniques

Microfabrication of solenoid-type RF SMD chip inductors with an Al2O3 core

A CMOS MEMS thermal sensor with high frequency output

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