A 40GB/S Optical NRZ Transmitter Based on Monolithic Microring Modulators in 45NM SOI CMOS

Lin, Sen; Moazeni, Sajjad; Stojanović, Vladimir

doi:10.1109/vlsic.2018.8502396

Cited by 3 publications

(5 citation statements)

References 6 publications

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“…[82] In 2018, University of California Berkeley demonstrated an optical NRZ transmitter based on micro-ring modulator in a monolithic process, achieving 330 fJ/bit energy efficiency and 6.7 Tbps/mm 2 bandwidth density. [83] In 2020, Ayar Labs demonstrated a monolithically integrated low power, Tbit-level optical interconnection. [84] In 2023, Ranovus demonstrated a monolithically integrated 800G optical interconnection with high bandwidth density and good energy efficiency.…”

Section: Monolithic Integrationmentioning

confidence: 99%

Silicon-based optoelectronic heterogeneous integration for optical interconnection

Li 李,

Zhang 张

et al. 2024

Chinese Phys. B

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The performance of optical interconnection has improved dramatically in recent years. Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection, which not only provides the optical gain which is absent from native Si substrates and enables complete photonic functionalities on chip, but also improves the system performance through advanced heterogeneous integrated packaging. This paper reviews recent progress of silicon-based optoelectronic heterogeneous integration in high performance optical interconnection. The research status, development trend and application of ultra-low loss optical waveguides, high-speed detectors, high-speed modulators, lasers and 2D, 2.5D, 3D and monolithic integration are focused on.

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Section: Monolithic Integrationmentioning

confidence: 99%

Silicon-based optoelectronic heterogeneous integration for optical interconnection

Li 李,

Zhang 张

et al. 2024

Chinese Phys. B

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“…We use the same method as in [21] to achieve manufacturable layouts of the photonics [49]. This method has been demonstrated to work multiple times in the past [21,23,[30][31][32][50][51][52].…”

Section: Zero-change Cmos Technology and Fabricationmentioning

confidence: 99%

“…It is important to note that we assume the serial clock as externally supplied and its energy contribution tends to zero in the limit of many used laser wavelengths. Distributing a global clock is beneficial for computercom systems: A PLL for 20 GHz could otherwise add 14.4 mW of power [31] or 1.4 pJ/b if used only for a single channel. Fig.…”

Section: Power and Area Efficiencymentioning

confidence: 99%

“…The technology has been further refined in the following years: The first ring-to-ring operation was shown in a four-lambda WDM demonstration at 8 Gb/s/lambda scaling to 0.1 Tb/s/mm 2 but for datacom applications with less stringent density requirements [23]. Two implementations have already demonstrated 40 Gb/s transmitters and have shown the potential for compactness: PAM4 signaling via an optical DAC was shown to scale to 1.0 Tb/s/mm 2 [30], and NRZ to 3.0 Tb/s/mm 2 [31]. A highly sensitive (9 µApp at 10 -12 BER) single-lambda receiver was subsequently fit into 1.0 Tb/s/mm 2 [32].…”

Section: Introductionmentioning

confidence: 99%

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Compact Optical TX and RX Macros for Computercom Monolithically Integrated in 45 nm CMOS

Eppenberger

Bonomi

Moor

et al. 2021

J. Lightwave Technol.

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As the reach of optical communications continues to shrink, photonics is moving from rack-to-rack datacom links to centimeter-scale in-computer applications (computercom) where different architectures are needed. Integrated optical microring resonators (MRRs) are emerging as an attractive choice for fulfilling the more stringent area and efficiency requirements: They offer scaling by wavelength division multiplexing (WDM) and high bandwidth densities. In this paper we present compact electro-optical transmit (TX) and receive (RX) macros for computercom monolithically integrated in 45nm CMOS. They operate with MRR modulators and photodetectors and include all necessary electronics and optics to enable optical links between on-chip data sources and sinks. A most compact implementation for thermal stabilization was enabled by sensing the optical device's bias currents in the driving electronics instead of using external operating point sensing optics. Using a field-effect transistor as heating element -as is possible in monolithic integration platforms -further reduces area and power necessary for thermal control. The TX macro is shown to work for data rates up to 16 Gb/s with a 5.5 dB extinction ratio (ER) and 2.4 dB insertion loss (IL). The RX macro demonstrates a sensitivity of 71 µApp at 12 Gb/s for a BER ≤ 10 -10 . An intra-chip link built with the macros achieves ≤ 2.35 pJ/b electrical efficiency and a BER ≤ 10 -10 at 10 Gb/s. Both macros are realized within 0.0073 mm 2 which amounts to 1.4 Tb/s/mm 2 bandwidth density per macro.

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“…In optical interconnect systems, microring modulators (Microring modulator (MRM)), which have the advantages of smaller size and lower power consumption compared to the traditional Mach-Zender modulator, have attracted more and more researchers' attention [14][15][16][17][18][19][20]. And the researchers are mainly concerned with the improvement of the performance to achieve high-speed, large capacity data interconnection in future data centres [21][22][23][24][25][26][27].…”

Section: Introductionmentioning

confidence: 99%

The high‐efficiency co‐design and the measurement verification of high‐bandwidth silicon photonic microring modulator

Cao

et al. 2022

IET Optoelectronics

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The microring modulator (MRM) is a small‐size and low‐power component, which is the potential for the next‐generation optical interconnection. By the theoretical analysis, increasing the electrical bandwidth, which is relevant to the cross section and the doping concentration of the doping region, is a better way to increase electro‐optical (EO) bandwidth. Therefore, a new doping profile of the PN depletion region with 4 doping concentration levels is introduced considering the electrical bandwidth. Based on the new doping profile, the MRM with the 160 μm length and the 0.33 and 0.2 μm coupling space are determined considering the trade‐off between the EO bandwidth, quality factor (Q), extinction ratio, area of MRM, and power consumption. Moreover, the MRM is characterised and is applied in a wavelength division multiplexing transmitter. By the measurement, the transmitter with the designed MRM could transmit PAM4 signal at 52 Gbps rate, which indicates the MRM could be potential for the 50 Gbps/ch optical interconnection.

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A 40GB/S Optical NRZ Transmitter Based on Monolithic Microring Modulators in 45NM SOI CMOS

Cited by 3 publications

References 6 publications

Silicon-based optoelectronic heterogeneous integration for optical interconnection

Silicon-based optoelectronic heterogeneous integration for optical interconnection

Compact Optical TX and RX Macros for Computercom Monolithically Integrated in 45 nm CMOS

The high‐efficiency co‐design and the measurement verification of high‐bandwidth silicon photonic microring modulator

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