A 40-Gb/s PAM-4 Transmitter Based on a Ring-Resonator Optical DAC in 45-nm SOI CMOS

Moazeni, Sajjad; Lin, Sen; Wade, Mark T.; Alloatti, Luca; Ram, Rajeev J.; Popović, Miloš A.; Stojanović, Vladimir

doi:10.1109/jssc.2017.2748620

Cited by 71 publications

(31 citation statements)

References 35 publications

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“…Based on the same platform, the speed has been boosted to 56 Gb/s by using the fourlevel PAM approach [259]. Meanwhile, several designs based on the 45-nm SOI platform [260]- [262] have been reported, including the first single-chip processor that communicates directly using light [261]. In addition to this, IHP introduced the SiGe:C platform, which is based on the 0.25-μm BiCMOS technology, and a 13-dB extinction ratio 28-Gb/s nonreturn-to-zero (NRZ) transmitter was reported in 2016 [263].…”

Section: I N T E G R At I O Nmentioning

confidence: 99%

“…A simple example is the wavelength stabilization system design for a microresonator [269]- [271], where a dedicated thermal control loop is designed to compensate for temperature drift and errors due to fabrication tolerances. The more advanced examples are segmented modulator and driver systems [262], [263], [272]- [275], where advanced modulation formats (such as PAM-4 and QAM-16) or optical signal shaping (such as feedforward equalization) become the system requirement. The trend of this electrical-optical codesigned system may significantly broaden the application area of silicon photonics as well as dramatically change the structure of existing optoelectronic transceivers.…”

Section: I N T E G R At I O Nmentioning

confidence: 99%

“…For example, a data rate of 56-Gb/s ON-OFF keying (OOK) was achieved at 300 mW [266] fabricated with the 55-nm BiCMOS technologies, which equivalent to 5.4 pJ/bit. On the other hand, several designs [259], [262], [263], [272]- [275] adopted advanced modulation formats (such as PAM-4 or PAM-16) with segmented MZM approaches, with each segment of the MZM treated as a lumped capacitive element, thus eliminating the need for termination resistors. For instance, the power efficiency for segmented MZM is 0.25 pJ/bit for 40-Gb/s PAM-16 in [272].…”

Section: P O W E R E F F I C I E N C Ymentioning

confidence: 99%

“…It not only eliminates the use of 50-matching resistors, but also features an exceptionally small footprint, which is preferred for monolithically integrated photonic circuits. For example, power consumption as low as 0.17 pJ/bit for the OOK mode [260] and 0.042 pJ/bit for the PAM-4 mode [262] has been demonstrated for the ring-resonatorbased modulator, which is one order better than for MZMs. However, as has been mentioned in Section III, thermal stability, fabrication tolerances, and the narrow operating wavelength range limit its utilization.…”

Section: P O W E R E F F I C I E N C Ymentioning

confidence: 99%

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The Emergence of Silicon Photonics as a Flexible Technology Platform

et al. 2018

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| In this paper, we present a brief history of silicon photonics from the early research papers in the late 1980s and early 1990s, to the potentially revolutionary technology that exists today. Given that other papers in this special issue give detailed reviews of key aspects of the technology, this paper will concentrate on the key technological milestones that were crucial in demonstrating the capability of silicon photonics as both a successful technical platform, as well as indicating the potential for commercial success. The paper encompasses discussion of the key technology areas of passive devices, modulators, detectors, light sources, and system integration.In so doing, the paper will also serve as an introduction to the other papers within this special issue.

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Section: I N T E G R At I O Nmentioning

confidence: 99%

Section: I N T E G R At I O Nmentioning

confidence: 99%

Section: P O W E R E F F I C I E N C Ymentioning

confidence: 99%

Section: P O W E R E F F I C I E N C Ymentioning

confidence: 99%

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The Emergence of Silicon Photonics as a Flexible Technology Platform

et al. 2018

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“…[3] At the transmitter (TX) side, high quality factor MRR modulators driven by CMOS transmitters imprint independent highspeed data streams on specified wavelengths from the laser source. [4][5][6][7] These MRR modulators can support very high data rates, with a recent depletion-mode device achieving 128 Gb s −1 four-level pulse amplitude modulation (PAM4) operation. [8] The dual process occurs at the receiver (RX) side with MRR filters utilized to drop a specific wavelength at a given channel for photodiodes to convert the optical power to current for detection by CMOS front-end circuits.…”

Section: Introductionmentioning

confidence: 99%

Design Considerations for Energy Efficient DWDM PAM4 Transceivers Employing Avalanche Photodiodes

Kumar

Huang

Zeng

et al. 2020

Laser & Photonics Reviews

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An effective approach to increase per‐fiber bandwidth is to combine per‐wavelength four‐level pulse amplitude modulation (PAM4) with dense wavelength division multiplexing (DWDM). Silicon photonic transceivers based on microring resonator modulators and drop filters can allow for an efficient realization of this. Utilizing avalanche photodiodes (APDs) in the receiver front‐ends of these transceivers can significantly improve sensitivity, allowing for reduced source laser power and overall improved power efficiency. This paper analyzes the optical‐modulation amplitude (OMA) sensitivity of these APD‐based PAM4 receivers in a silicon photonic DWDM link. A comprehensive link budget is considered that takes into account various system losses and relevant noise sources. Modeling with a developed APD that has a maximum 230 GHz gain‐bandwidth product predicts sensitivity improvements at 32 to 64 Gb s−1 PAM4 ranging from 9.8 to 12 dB relative to a conventional p‐i‐n photodiode. Scaling the APD gain‐bandwidth to 310 GHz allows support of 112 Gb s−1 with −13.2 dBm OMA sensitivity at a BER of 2.4×10−4 with an APD gain of 10. Utilizing the presented architecture, link budget analysis predicts a 9.5x reduction in laser power with APDs and that 38 mW source laser optical power can support a four‐channel DWDM link operating at an aggregate 448 Gb s−1 data rate.

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Co-packaged optics (CPO): status, challenges, and solutions

Tan

Liu³

et al. 2023

Front. Optoelectron.

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Due to the rise of 5G, IoT, AI, and high-performance computing applications, datacenter traffic has grown at a compound annual growth rate of nearly 30%. Furthermore, nearly three-fourths of the datacenter traffic resides within datacenters. The conventional pluggable optics increases at a much slower rate than that of datacenter traffic. The gap between application requirements and the capability of conventional pluggable optics keeps increasing, a trend that is unsustainable. Co-packaged optics (CPO) is a disruptive approach to increasing the interconnecting bandwidth density and energy efficiency by dramatically shortening the electrical link length through advanced packaging and co-optimization of electronics and photonics. CPO is widely regarded as a promising solution for future datacenter interconnections, and silicon platform is the most promising platform for large-scale integration. Leading international companies (e.g., Intel, Broadcom and IBM) have heavily investigated in CPO technology, an inter-disciplinary research field that involves photonic devices, integrated circuits design, packaging, photonic device modeling, electronic-photonic co-simulation, applications, and standardization. This review aims to provide the readers a comprehensive overview of the state-of-the-art progress of CPO in silicon platform, identify the key challenges, and point out the potential solutions, hoping to encourage collaboration between different research fields to accelerate the development of CPO technology. Graphical Abstract

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A 40-Gb/s PAM-4 Transmitter Based on a Ring-Resonator Optical DAC in 45-nm SOI CMOS

Cited by 71 publications

References 35 publications

The Emergence of Silicon Photonics as a Flexible Technology Platform

The Emergence of Silicon Photonics as a Flexible Technology Platform

Design Considerations for Energy Efficient DWDM PAM4 Transceivers Employing Avalanche Photodiodes

Co-packaged optics (CPO): status, challenges, and solutions

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