A 36–80 GHz High Gain Millimeter-Wave Double-Balanced Active Frequency Doubler in SiGe BiCMOS

Chen, A.Y.-K.; Baeyens, Y.; Chen, Young-Kai; Lin, Jenshan

doi:10.1109/lmwc.2009.2027084

Cited by 50 publications

(4 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Besides, it is challenging to design a broadband frequency divider chain in an E-band phase-locked loop (PLL) for E-band VCO output frequency locking. Meanwhile, such divider chain is power hungry [9], which in turn leads to low DC-to-RF conversion efficiency of the E-band signal source. In addition, whether it is an E-band communication or radar systems, in practical applications, the system needs to have better performance as the ambient temperature changes.…”

Section: Introductionmentioning

confidence: 99%

An E-Band SiGe High Efficiency, High Harmonic Suppression Amplifier Multiplier Chain With Wide Temperature Operating Range

Zhou

Chen

Yan

et al. 2022

IEEE Trans. Circuits Syst. I

View full text Add to dashboard Cite

published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User

show abstract

Section: Introductionmentioning

confidence: 99%

An E-Band SiGe High Efficiency, High Harmonic Suppression Amplifier Multiplier Chain With Wide Temperature Operating Range

Zhou

Chen

Yan

et al. 2022

IEEE Trans. Circuits Syst. I

View full text Add to dashboard Cite

show abstract

“…The balanced doubler is attractive due to the good fundamental and odd harmonics suppression in contrast to its single ended counterpart [4]. However, active or passive baluns are compulsory in balanced topology [5]- [7]. The active balun introduces additional dc power and a passive one occupies large area.…”

Section: Introductionmentioning

confidence: 99%

A W-Band Traveling-Wave Frequency Doubler With Output Power of 9 dBm and Power Efficiency of 11.2%

Zhang

Sun

2014

IEEE Microw. Wireless Compon. Lett.

View full text Add to dashboard Cite

An 85 to 110 GHz high efficiency, high output power frequency doubler is presented in this letter. The traveling-wave topology is used to generate even harmonics and suppress odd harmonics effectively. The output fundamental and 4th harmonic reflectors are applied to enhance the efficiency, conversion gain and fundamental rejection. The measured results show a peak conversion gain of 3.2 dB and peak efficiency of 11.2% with a saturated output power of 9 dBm at 100 GHz. The doubler exhibits higher than 30 dB fundamental rejection from 85 to 110 GHz with a compact chip size of 1.5 0.9 mm .Index Terms-Frequency doubler, high efficiency, high output power, reflectors, traveling-wave.

show abstract

“…[4][5][6][7] In this letter, we present a frequency doubler working in the 94-GHz range (W -band) because the frequency window around 94 GHz is interesting for various wireless applications including passive millimeter wave imaging and Gigabits per second wireless data links due to the relatively low atmospheric attenuation. 8 good candidate and complement especially under low visibility conditions.…”

Section: Introductionmentioning

confidence: 99%

A 94-GHz Frequency Doubler in Nano-Scale CMOS Technology for <I>W</I>-Band Millimeter Wave Passive Imaging Systems

Zheng¹,

Qin²,

Liu³

2014

Nanosci Nanotechnol Lett

View full text Add to dashboard Cite

In this letter, we present a K a -band to W -band (47-GHz to 94-GHz) millimeter wave frequency doubler realized in 65-nm low power CMOS technology. The proposed W -band frequency multiplier features a conversion gain of about 2 dB at 0 dBm K a -band input signal power with a 10.6% −3 dB bandwidth from 88.7-GHz to 98.7-GHz. The maximum saturated output power to a 50-Ohm load is about 2.5-dBm. The suppression of the unwanted harmonics is more than 85-dBc. The DC power consumption of the proposed design is only 9.6 mW under a single 1.2-V supply.

show abstract

A 36–80 GHz High Gain Millimeter-Wave Double-Balanced Active Frequency Doubler in SiGe BiCMOS

Cited by 50 publications

References 9 publications

An E-Band SiGe High Efficiency, High Harmonic Suppression Amplifier Multiplier Chain With Wide Temperature Operating Range

An E-Band SiGe High Efficiency, High Harmonic Suppression Amplifier Multiplier Chain With Wide Temperature Operating Range

A W-Band Traveling-Wave Frequency Doubler With Output Power of 9 dBm and Power Efficiency of 11.2%

A 94-GHz Frequency Doubler in Nano-Scale CMOS Technology for <I>W</I>-Band Millimeter Wave Passive Imaging Systems

Contact Info

Product

Resources

About