DOI: 10.1109/isscc.1983.1156521
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Abstract: A 256K X l b MOS dynamic RAM, fabricated with MoSi2 gate technology and equipped with redundant cells for yield imp r o v e m a w i l l b e described. The RAM typically exhibits a 34ns CAS access time and 170mW active power dissipation (at 5V Vcc and 26011s cycle time).The high speed operation was achieved as a result of two contributing factors. One is the use of MoSi2' gate technology.The low sheet resistivity of MoSi2, typically 3 ! 2 / 0 , reduces the propagation delay time along the word line. MoSi2 inte…

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