1981
DOI: 10.1109/isscc.1981.1156177
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Abstract: York to wn Heights, N YEXPLORATORY ONE-DEVICE DYNAMIC RAM arrays, fabricated with an N-channel single-level polycide, 22.5nm gate oxide technology, using electron-beam direct writing for lithography with a minimum feature size of lpm' will be described. A singlelevel polycide structure rather than an overlapping double-polysilicon cell was chosen because it uses a simpler and more reliable process. In this paper it will be demonstrated that with a nonconventional cell layout', low resistance polycide3 wordlin…

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