1983
DOI: 10.1109/isscc.1983.1156547
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Abstract: A 4Kb BIPOLAR STATIC ECL RAM using U-groove isolation IOP-I1 (Isolation by Oxide and Polysilicon) and 1 . 5~ design rules, will be reported. The device has a typical access time of 3.2ns and a typical write pulse of 2.3ns with a power dissipation of 3W. An example of the switching waveform is shown in Figure 1. The die is assembled in a 60-pin flat package.by connecting 1/0 (Input/Output) terminals of smaller RAM devices with x 4b arrangements, with board wiring which increases 1/0 capacitance. The switching …

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