DOI: 10.1109/isscc.1983.1156540
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Abstract: A SI MONOLITHIC IR-CCD with Schottky-barrier (SB) detectors has been reported to be most suitable for fabricating large scale infrared image sensors'-'. In this paper, a large scale Simonolithic IR-CCD with 65536 (256x256) pixels will be desscribed. The detector is a PtSijP-Si SB diode. To fabricate such a large scale IR-CCD, the three-level polysilicon gate structure and minimum design rules of 29 were applied. The array has resolution sufficient for practical use, and good thermal images were obtained witho…

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