1982
DOI: 10.1109/isscc.1982.1156282
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Abstract: Mesa, AZAN LSI CIRCUIT fabricated by a process* utilizing a walledemitter structure and a three-layer metalization system will be described. A cross section of the transistor is shown in Figure 1.The collector-emitter piping in the conventional walled-emitter structure has been eliminated by using the reverse master mask technique (RILIMT) which insures that the vertical profile of the emitter and active base are determined by the same surface structures. The current gain and base series resistance can be ind…

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