Abstract:Purpose
The purpose of this paper is to implement a highly linear 180 nm complementary metal oxide semiconductor (CMOS) power amplifier (PA) to meet the stringent linearity requirement of an long term evolution (LTE) signal with minimum trade-off to power added efficiency (PAE).
Design/methodology/approach
The CMOS PA is designed in a cascaded dual-stage configuration comprises a driver amplifier and a main PA. The gate voltage (VGS) of the driver amplifier is tuned to optimize its positive third-order trans… Show more
“…S. Mariappan et al (2021) presented a dual-stage CMOS PA with adaptive biasing in which the gate voltage of the driver amplifier was adaptively tuned to be in opposition to the third-order transconductance response compared to the main PA [ 148 ]. The biasing voltage was supplied through a current-mirror configured biasing circuit.…”
“… Linear PAE across linear output power for the proposed linearity enhancement techniques [ 116 , 118 , 119 , 121 , 123 , 124 , 129 , 132 , 133 , 134 , 135 , 136 , 137 , 142 , 143 , 144 , 145 , 146 , 147 , 148 , 149 , 150 ]. …”
Section: Figurementioning
confidence: 99%
“…Figure 25. Linear PAE across linear output power for the proposed linearity enhancement techniques[116,118,119,121,123,124,129,[132][133][134][135][136][137][142][143][144][145][146][147][148][149][150].…”
Wireless communication systems have undergone significant development in recent years, particularly with the transition from fourth generation (4G) to fifth generation (5G). As the number of wireless devices and mobile data usage increase, there is a growing need for enhancements and upgrades to the current wireless communication systems. CMOS transceivers are increasingly being explored to meet the requirements of the latest wireless communication protocols and applications while achieving the goal of system-on-chip (SoC). The radio frequency power amplifier (RFPA) in a CMOS transmitter plays a crucial role in amplifying RF signals and transmitting them from the antenna. This state-of-the-art review paper presents a concise discussion of the performance metrics that are important for designing a CMOS PA, followed by an overview of the trending research on CMOS PA techniques that focuses on efficiency, linearity, and bandwidth enhancement.
“…S. Mariappan et al (2021) presented a dual-stage CMOS PA with adaptive biasing in which the gate voltage of the driver amplifier was adaptively tuned to be in opposition to the third-order transconductance response compared to the main PA [ 148 ]. The biasing voltage was supplied through a current-mirror configured biasing circuit.…”
“… Linear PAE across linear output power for the proposed linearity enhancement techniques [ 116 , 118 , 119 , 121 , 123 , 124 , 129 , 132 , 133 , 134 , 135 , 136 , 137 , 142 , 143 , 144 , 145 , 146 , 147 , 148 , 149 , 150 ]. …”
Section: Figurementioning
confidence: 99%
“…Figure 25. Linear PAE across linear output power for the proposed linearity enhancement techniques[116,118,119,121,123,124,129,[132][133][134][135][136][137][142][143][144][145][146][147][148][149][150].…”
Wireless communication systems have undergone significant development in recent years, particularly with the transition from fourth generation (4G) to fifth generation (5G). As the number of wireless devices and mobile data usage increase, there is a growing need for enhancements and upgrades to the current wireless communication systems. CMOS transceivers are increasingly being explored to meet the requirements of the latest wireless communication protocols and applications while achieving the goal of system-on-chip (SoC). The radio frequency power amplifier (RFPA) in a CMOS transmitter plays a crucial role in amplifying RF signals and transmitting them from the antenna. This state-of-the-art review paper presents a concise discussion of the performance metrics that are important for designing a CMOS PA, followed by an overview of the trending research on CMOS PA techniques that focuses on efficiency, linearity, and bandwidth enhancement.
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