2021
DOI: 10.1108/cw-08-2020-0209
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A 23.3 dBm CMOS power amplifier with third-order gm cancellation linearization technique achieving OIP3 of 34 dBm

Abstract: Purpose The purpose of this paper is to implement a highly linear 180 nm complementary metal oxide semiconductor (CMOS) power amplifier (PA) to meet the stringent linearity requirement of an long term evolution (LTE) signal with minimum trade-off to power added efficiency (PAE). Design/methodology/approach The CMOS PA is designed in a cascaded dual-stage configuration comprises a driver amplifier and a main PA. The gate voltage (VGS) of the driver amplifier is tuned to optimize its positive third-order trans… Show more

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Cited by 1 publication
(3 citation statements)
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“…S. Mariappan et al (2021) presented a dual-stage CMOS PA with adaptive biasing in which the gate voltage of the driver amplifier was adaptively tuned to be in opposition to the third-order transconductance response compared to the main PA [ 148 ]. The biasing voltage was supplied through a current-mirror configured biasing circuit.…”
Section: Linearity Enhancement Techniquesmentioning
confidence: 99%
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“…S. Mariappan et al (2021) presented a dual-stage CMOS PA with adaptive biasing in which the gate voltage of the driver amplifier was adaptively tuned to be in opposition to the third-order transconductance response compared to the main PA [ 148 ]. The biasing voltage was supplied through a current-mirror configured biasing circuit.…”
Section: Linearity Enhancement Techniquesmentioning
confidence: 99%
“… Linear PAE across linear output power for the proposed linearity enhancement techniques [ 116 , 118 , 119 , 121 , 123 , 124 , 129 , 132 , 133 , 134 , 135 , 136 , 137 , 142 , 143 , 144 , 145 , 146 , 147 , 148 , 149 , 150 ]. …”
Section: Figurementioning
confidence: 99%
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