2021
DOI: 10.1109/jssc.2021.3102602
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A 22.9–38.2-GHz Dual-Path Noise-Canceling LNA With 2.65–4.62-dB NF in 28-nm CMOS

Abstract: In this article, a 22.9-38.2-GHz dual-path noisecanceling low noise amplifier (LNA) is proposed, which can achieve a low noise figure (NF) by reducing the noise of both paths. Such LNA consists of one common gate (CG) amplifier with one three-stage transformer, one resistive feedback common-source (CS) amplifier, and two amplitude-adjusting amplifiers. The three-stage transformer is used in the CG amplifier to provide gain-boosting, noise-reducing, and wideband inter-stage matching operation, simultaneously. M… Show more

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Cited by 28 publications
(3 citation statements)
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References 36 publications
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“…Such inphase noise is generated from the source noise of M 1 , which is amplified by the auxiliary path before canceling. By properly adjusting the gains of M 3 and M 4 , the noise-canceling ratio is improved [48]. In the proposed NCLNA, the gain and operation bandwidth is determined by the performance of the main path.…”
Section: B Wideband Nclna and Rfvgamentioning
confidence: 99%
“…Such inphase noise is generated from the source noise of M 1 , which is amplified by the auxiliary path before canceling. By properly adjusting the gains of M 3 and M 4 , the noise-canceling ratio is improved [48]. In the proposed NCLNA, the gain and operation bandwidth is determined by the performance of the main path.…”
Section: B Wideband Nclna and Rfvgamentioning
confidence: 99%
“…The models in Section 4.3 are now used to develop a measure of link rate coverage for OtI scenarios with "traditional" or Low-e glass. Table 5 defines typical parameters for the 28 GHz BS and UE representative of recent advances in state-of-the art mmWave hardware [43][44][45][46][47]. We select conservative values for these parameters to reduce the possibility of overestimating data rates, and we include an additional 5 dB of losses in 𝑁 𝐹 .…”
Section: Glass-dependent Oti Data Ratesmentioning
confidence: 99%
“…Benefit from the advantages of high integration and relatively low cost of CMOS technology, several mmwave LNAs in the CMOS process have been reported [1,2,3,4,5,6,7]. However, due to the lossy silicon substrate and low carrier mobility, these LNAs have relatively poor noise figure, gain, and linearity performance.…”
Section: Introductionmentioning
confidence: 99%