A 20.7–31.8GHz Dual-Mode Voltage Waveform-Shaping Oscillator with 195.8dBc/Hz FoM<sub>T</sub> in 28nm CMOS

Shu, Yiyang; Qian, Huizhen Jenny; Luo, Xun

doi:10.1109/rfic.2018.8429001

Cited by 18 publications

(5 citation statements)

References 3 publications

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“…The FOM and FOM T of the proposed VCO are around −177.92 and −178.2, respectively. Table 1 shows the performance comparison of the proposed VCO and the published state-of-the-art VCOs [9][10][11][12][13][14][15][16][17][18][19]. Due to high-power consumption, the calculated FOM of this design could not stand out when comparing with those published state-of-the-art designs.…”

Section: Measurement Resultsmentioning

confidence: 99%

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New 20 GHz push–push common‐collector Colpitts VCO

Huang

Dai

et al. 2020

IET Microwaves, Antennas & Propagation

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A wide‐band push–push common‐collector Colpitts voltage‐controlled oscillator (VCO) usingimpedance peaking network and gain enhancing technique is proposed in this work.The impedance peaking network is introduced to increase the coupling factor ofthe differential inductor in the inductorcapacitor (LC) tank without sacrificing the quality factor. The impedancepeaking technique could guarantee the push–push VCO unconditionally oscillatingin a differential mode without degrading the phase noise performance. The gainenhancing technique employs an LC resonator in series with the emitterdegeneration resistor in the common‐collector amplifier in the VCO core toimprove the VCO oscillating amplitude and then improve the phase noiseperformance. The proposed VCO oscillates at around 20 GHz with >10.5%frequency tuning range from 18.9 to 21.4 GHz across temperature from −40 to125°C. The measured phase noise is lower than −107 dBc/Hz at 1 MHz offset acrossthe entire working temperature (−40 125°C). The whole VCO dissipates 45 mA under3.3 V power supply, and the typical figure of merit is around −177.92.

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Section: Measurement Resultsmentioning

confidence: 99%

“…to the figure of merit (FOM) and the figure of merit including FTR (FOM T ) defined as[9][10][11][12][13][14][15][16] …”

mentioning

confidence: 99%

New 20 GHz push–push common‐collector Colpitts VCO

Huang

Dai

et al. 2020

IET Microwaves, Antennas & Propagation

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“…To verify the mechanism mentioned above, the dual-mode voltage waveform-shaping oscillator [27] is designed and fabricated in a conventional 28-nm CMOS technology. In each oscillator core, a resistor loaded tail current source is utilized to control the oscillator current and suppress the flicker noise up-conversion.…”

Section: Implementation and Measurement Of Dual-mode Waveform-shmentioning

confidence: 99%

“…Finally, the dual-mode voltage waveform-shaping oscillator and the cascaded mode-switching PLL are implemented in a conventional 28-nm CMOS technology, respectively. The oscillator [27] achieves a 42.3% tuning range and a FoM T of −200.7 dBc/Hz at 10 MHz offset. The proposed PLL exhibits a frequency range from 22.8 to 33.9 GHz.…”

mentioning

confidence: 99%

A Cascaded Mode-Switching Sub-Sampling PLL With Quadrature Dual-Mode Voltage Waveform-Shaping Oscillator

Shu

Qian

Luo

2021

IEEE Trans. Circuits Syst. I

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A cascaded mode-switching sub-sampling PLL with quadrature dual-mode voltage waveform-shaping oscillator is proposed in this paper. The dual-mode voltage waveform-shaping oscillator is introduced to extend the tuning range and improve phase noise performance at mm-wave frequency, simultaneously. Meanwhile, the dual-mode quadrature topology is investigated to reduce the phase noise and quadrature phase error, compared to conventional quadrature oscillator. Then, the proposed oscillator is applied in a cascaded PLL with divider-less mode-switching sub-sampling loop, which can obtain the merits of high frequency-resolution, low loop noise, and wide frequency locking range. Both the dual-mode voltage waveform-shaping oscillator and the cascaded PLL are verified and fabricated in a 28-nm CMOS process. The FoM and FoM T of the oscillator at 10 MHz offset are −188.2 dBc/Hz and −200.7 dBc/Hz respectively. The proposed PLL prototype exhibits a frequency range from 22.8 to 33.9 GHz with a typical power consumption of 41.7 mW. The phase noise across the frequency band is from −104.1 to −108.2 dBc/Hz at 1 MHz offset. The jitter FoM j is −236.2 dB.

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“…Theoretical maximum FoM of 100% efficient oscillator (η=1), with noise-less R L0 and noiseless negative conductance (F=1), can be given by Eq. (12).…”

Section: B Quantitative Analysismentioning

confidence: 99%

Analysis and Design Considerations for Achieving the Fundamental Limits of Phase Noise in mmWave Oscillators with On-Chip MEMS Resonator

Srivastava¹,

Chatterjee²,

Rawat³

et al. 2020

Preprint

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Very small electromechanical coupling coefficient in micro-electromechanical systems (MEMS) or acoustic resonators is quite of a concern for oscillator performance, specially at mmWave frequencies. This small coefficient is the manifestation of the small ratio of motional capacitance to static capacitance in the resonators. This work provides a general solution to overcome the problem of relatively high static capacitance at mmWave frequencies and presents analysis and design techniques for achieving extremely low phase noise and a very high figureof-merit (FoM) in an on-chip MEMS resonator based mmWave oscillator. The proposed analysis and techniques are validated with design and simulation of a 30 GHz oscillator with MEMS resonator having quality factor of 10,000 in 14 nm GF technology. Post layout simulation results show that it achieves a phase noise of -132 dBc/Hz and FoM of 217 dBc/Hz at offset of 1 MHz.

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A 20.7–31.8GHz Dual-Mode Voltage Waveform-Shaping Oscillator with 195.8dBc/Hz FoM_T in 28nm CMOS

Cited by 18 publications

References 3 publications

New 20 GHz push–push common‐collector Colpitts VCO

New 20 GHz push–push common‐collector Colpitts VCO

A Cascaded Mode-Switching Sub-Sampling PLL With Quadrature Dual-Mode Voltage Waveform-Shaping Oscillator

Analysis and Design Considerations for Achieving the Fundamental Limits of Phase Noise in mmWave Oscillators with On-Chip MEMS Resonator

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A 20.7–31.8GHz Dual-Mode Voltage Waveform-Shaping Oscillator with 195.8dBc/Hz FoMT in 28nm CMOS

Cited by 18 publications

References 3 publications

New 20 GHz push–push common‐collector Colpitts VCO

New 20 GHz push–push common‐collector Colpitts VCO

A Cascaded Mode-Switching Sub-Sampling PLL With Quadrature Dual-Mode Voltage Waveform-Shaping Oscillator

Analysis and Design Considerations for Achieving the Fundamental Limits of Phase Noise in mmWave Oscillators with On-Chip MEMS Resonator

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A 20.7–31.8GHz Dual-Mode Voltage Waveform-Shaping Oscillator with 195.8dBc/Hz FoM_T in 28nm CMOS