DOI: 10.1109/isscc.1983.1156478
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Abstract: TO OBTAIN LOW-NOISE CHARACTERISTICS in a monolithic GaAs FET broadband amplifier covering the VHF and UHF bands, the negative feedback approach has been shown to offer the most effective ~i r c u i t '~*~~. However, this circuit dissipates a large current due to the wide gate width required for achieving a large open loop gain (a gm) through which a low NF and a high gain are obtainable. This paper will offer a GaAs monolithic broadband amplifier design (Figure 1) in which the following approach has been take…

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