A 174 pW–488.3 nW 1 S/s–100 kS/s All-Dynamic Resistive Temperature Sensor With Speed/Resolution/Resistance Adaptability

Xin, Haoming; Andraud, Martin; Baltus, Peter; Cantatore, Eugenio; Harpe, Pieter

doi:10.1109/lssc.2018.2827883

Cited by 51 publications

(30 citation statements)

References 7 publications

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“…Due to their microwatt-level power consumption, ultralow power energy-autonomous devices have a small self-heating rate and magnitude. A nanowatt temperature sensor that supports 1-point temperature-based calibration is reported in [21] and a microwatt temperature sensor that supports voltage-based calibration is reported in [22].…”

Section: Delay Chain Temperature Compensationmentioning

confidence: 99%

A Fully Integrated Programmable 6.0–8.5-GHz UWB IR Transmitter Front-End for Energy-Harvesting Devices

Haapala

Rantataro

Halonen

2020

IEEE J. Solid-State Circuits

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Ultra-wideband impulse radio transceivers are becoming a key building block for establishing ultralow power wireless sensor networks. However, impulse radio transmitters commonly suffer from a low spectral quality and a coarse frequency tuning resolution, which limits their global applicability. In this article, we present a fully integrated ultralow power impulse radio transmitter front-end (TFE) whose pulse shaping capabilities and integrated output matching network make it globally applicable up to a 4-MHz pulse repetition rate. We demonstrate a digital carrier frequency-tuning method that achieves a 28-MHz resolution over the frequency band of 6.0-8.5 GHz. In addition, we show that the temperature dependence of the TFE's carrier frequency can be compensated digitally over the industrial temperature range from −40 • C to 85 • C. The proposed TFE supports energy-harvesting applications particularly well due to its low leakage power level of 380 nW and a high tolerance to power supply transients during pulse generation. It is demonstrated to operate robustly with low-drive regulators powered by low-quality sources. The TFE is fabricated in a 65-nm CMOS process. It generates 1.8-pJ pulses at a 7.5-GHz carrier frequency while consuming 63 pJ per pulse, corresponding to 2.3% efficiency.

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Section: Delay Chain Temperature Compensationmentioning

confidence: 99%

A Fully Integrated Programmable 6.0–8.5-GHz UWB IR Transmitter Front-End for Energy-Harvesting Devices

Haapala

Rantataro

Halonen

2020

IEEE J. Solid-State Circuits

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“…The performances of the trimmed thermal sensor ( Figure 3 ) are compared with recently reported digital temperature sensors [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 ] in Table 2 . The experimental results of 25 measured DTS samples are in good agreement with the majority of referred data [ 4 , 5 , 6 , 11 , 12 , 13 , 14 , 15 , 18 , 19 , 21 , 24 ], providing low inaccuracy in a wide temperature range. Furthermore, the proposed trimmed DTS can be supplied with an extended domain of supply voltages.…”

Section: Trimming a Digital Temperature Sensor With Eeprom Fusesmentioning

confidence: 99%

“…Modern CMOS smart temperature sensors are categorized according to the sensing device (BJT, MOS in subthreshold region and resistor) or the physical principle on which the temperature is detected (bandgap voltage and thermal diffusion (TD)) [ 7 , 8 ]. Increased accuracy, high precision, and output linearity with low power consumption are some of the most important targets to achieve when designing such integrated sensors [ 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 ]. The aim to meet these requirements with low production costs becomes more and more challenging these days.…”

Section: Introductionmentioning

confidence: 99%

A Digital Improvement—Trimming a Digital Temperature Sensor with EEPROM Reprogrammable Fuses

Vasile

Negut²,

Tache³

et al. 2021

Sensors

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An EEPROM (electrically erasable programmable read-only memory) reprogrammable fuse for trimming a digital temperature sensor is designed in a 0.18-µm CMOS EEPROM. The fuse uses EEPROM memory cells, which allow multiple programming cycles by modifying the stored data on the digital trim codes applied to the thermal sensor. By reprogramming the fuse, the temperature sensor can be adjusted with an increased trim variation in order to achieve higher accuracy. Experimental results for the trimmed digital sensor showed a +1.5/−1.0 ℃ inaccuracy in the temperature range of −20 to 125 ℃ for 25 trimmed DTS samples at 1.8 V by one-point calibration. Furthermore, an average mean of 0.40 ℃ and a standard deviation of 0.70 ℃ temperature error were obtained in the same temperature range for power supply voltages from 1.7 to 1.9 V. Thus, the digital sensor exhibits similar performances for the entire power supply range of 1.7 to 3.6 V.

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“…Additionally, while displaying good predictability, temperature sensors based on resistors [ 7 , 8 , 9 , 10 , 11 ] such as BJT sensors have high linearity and accuracy, but on the other hand, consume more area and add additional noise into the circuit. New technology nodes that work with supply voltages under 1 V have made resistance temperature sensors an alternative to BJT sensors because the base-emitter voltage,

, of the BJTs is around 0.7, which is very close to the power supply.…”

Section: Introductionmentioning

confidence: 99%

A 900 μm2 BiCMOS Temperature Sensor for Dynamic Thermal Management

Aparicio

Ituero

2020

Sensors

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The extreme miniaturization of electronic technologies has turned varying and unpredictable temperatures into a first-class concern for high performance processors which mitigate the problem employing dynamic thermal managements control systems. In order to monitor the thermal profile of the chip, these systems require a collection of on-chip temperature sensors with strict demands in terms of area and power overhead. This paper introduces a sensor topology specially tailored for these requirements. Targeting the 40 nm CMOS technology node, the proposed sensor uses both bipolar and CMOS transistors, benefiting from the stable thermal characteristics of the former and the compactness and speed of the latter. The sensor has been fully characterized through extensive post-layout simulations for a temperature range of 0 ∘ C to 100 ∘ C , achieving a maximum error of ±0.9 ∘ C / considering 3 σ yield and a resolution of 0.5 ∘ C . The area—900 μ m 2 , energy per conversion—1.06 nJ, and sampling period—2 μ s, are very competitive compared to previous works in the literature.

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A 174 pW–488.3 nW 1 S/s–100 kS/s All-Dynamic Resistive Temperature Sensor With Speed/Resolution/Resistance Adaptability

Cited by 51 publications

References 7 publications

A Fully Integrated Programmable 6.0–8.5-GHz UWB IR Transmitter Front-End for Energy-Harvesting Devices

A Fully Integrated Programmable 6.0–8.5-GHz UWB IR Transmitter Front-End for Energy-Harvesting Devices

A Digital Improvement—Trimming a Digital Temperature Sensor with EEPROM Reprogrammable Fuses

A 900 μm2 BiCMOS Temperature Sensor for Dynamic Thermal Management

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