A 120-Gb/s 100–145-GHz 16-QAM Dual-Band Dielectric Waveguide Interconnect With Package Integrated Diplexers in Intel 16

Dogiamis, Georgios C.; Brown, Thomas W.; Gaunkar, Neelam Prabhu; Nam, Ye Seul; Rane, Triveni S.; Ravikumar, Surej; Neeli, Vijaya B.; Chou, Jessica C.; Rami, Said; Swan, Johanna

doi:10.1109/lssc.2022.3191526

Cited by 14 publications

(8 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Communication is another key application of SMMWs because of the wide frequency bands that can be allocated. Both high data rate wireless communication ,,,− and wireline communication ,− are possible. SMMW wireless links can also be made more energy efficient than 5G links .…”

Section: Applications For Silicon Integrated Sub-millimeter Wave Systemsmentioning

confidence: 99%

“…Silicon integrated SMMW systems have been utilized for short-range imaging − through packages and fog, electronic smelling using rotational spectroscopy − that can detect and quantify concentrations of a wide variety of gases, and high data rate energy-efficient wireless communication − and wireline communication over 1 m dielectric waveguides , that seeks to overcome the tight tolerance limitations of optical communication systems.…”

Section: Applications For Silicon Integrated Sub-millimeter Wave Systemsmentioning

confidence: 99%

“…Wireline communication using a dielectric waveguide with CMOS integrated circuits over a short distance (∼1 m) has been proposed to mitigate the complexity of high data rate communication over copper wires and the challenges for implementing optical communication systems. ,,,, Frequency division multiplexing and polarization division multiplexing can be simultaneously used to increase the data rate for a given bandwidth . Use of horizontal and vertical polarization communication modes in five 45 GHz frequency bands between 157.5 and 382.5 GHz provides a total of 10 channels.…”

Section: Applications For Silicon Integrated Sub-millimeter Wave Systemsmentioning

confidence: 99%

“…Recent advances of silicon integrated circuits technologies, including SiGe-HBT’s (hetero-junction bipolar transistors), − CMOS (complementary metal oxide semiconductor), , and BiCMOS (bipolar-CMOS) IC technologies , have made them an alternate means to implement capable systems for the applications. − CMOS is the cost-effective IC technology used to manufacture the bulk of electronics including those for smartphones, tablets, PC’s, and others. The differentiating capabilities of silicon electronics for operation at 0.3–1 THz are integration of complex systems into a small form factor and reduced manufacturing cost due to the integration, high yield, and sharing of the infrastructure and cost for design and manufacturing by a large number and variety of high-volume IC products.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits

Choi,

2024

ACS Photonics

View full text Add to dashboard Cite

Over the past 15 years, the output power of silicon submillimeter-wave electronics has increased by a factor greater than 1000 reaching −3.9 dBm at 440 GHz for a single unit in CMOS and −10.7 dBm at 1.01 THz for a 42-element array in SiGe BiCMOS. The smallest power of a 1 kHz bandwidth signal at 420 GHz that can be detected has improved by 100 million times. These and the expected improvements from the ongoing activities should be sufficient to support high resolution imaging with a range of up to several hundred meters, gas sensing up to ∼1 THz, and communication over ∼1000 m. The silicon IC technologies enable integration of complex systems into a small form factor and reduction of manufacturing cost. When broad deployment of submillimeter wave systems for everyday life applications becomes necessary, the silicon IC infrastructure will be the most capable to support the high-volume manufacturing need.

show abstract

Section: Applications For Silicon Integrated Sub-millimeter Wave Systemsmentioning

confidence: 99%

Section: Applications For Silicon Integrated Sub-millimeter Wave Systemsmentioning

confidence: 99%

Section: Applications For Silicon Integrated Sub-millimeter Wave Systemsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits

Choi,

2024

ACS Photonics

View full text Add to dashboard Cite

show abstract

“…Area and power efficiency of sub-millimeter wave circuits and integrated systems should be improved in order to expand the application opportunities. A necessary approach for improving the energy efficiency of systems and also for relaxing the efficiency and other performance requirements of circuits is better control of EM energy propagation using external passive optics including electronically steerable reflectarrays [88]- [91] and wave guiding structures [7], [81], [82], [92]. Improving their performance, and making them easy to use, adaptable, steerable and affordable are critical research opportunities and challenges.…”

Section: Future Of Cmos Submillimeter Wave Circuitsmentioning

confidence: 99%

CMOS Platform for Everyday Applications Using Submillimeter Electromagnetic Waves

Choi

Zhu

et al. 2023

IEEE Open J. Solid-State Circuits Soc.

View full text Add to dashboard Cite

CMOS (Complementary Metal Oxide Silicon) integrated circuits (IC's) technology is emerging as a means for realization of capable and affordable systems that operate at frequencies near 300GHz and higher. This is lowering a key barrier for utilizing the sub-millimeter electromagnetic waves in everyday applications. Despite the fact that the unity maximum available gain frequency, f max of NMOS transistors (with connections to the tope metal layer) has peaked at ~320 GHz, signal generation up to 1.33 THz, coherent detection up to 1.2 THz and incoherent detection up to ~10 THz have been demonstrated using CMOS integrated circuits. Furthermore, highly integrated rotational spectroscopy transceivers operating at frequencies up to near 300 GHz, 300-GHz and 400-GHz concurrent transceiver pixels and arrays for high resolution radar imaging, and 300-GHz and 390-GHz transmitters, and 300-GHz receivers for high data-rate communication have been demonstrated in CMOS. The performances of these CMOS circuits are sufficient or close to being sufficient to support electronic smelling using rotational spectroscopy that can detect and quantify concentrations of a wide variety of gases; imaging that can enable operation in a wide range of visually impaired conditions; and high-bandwidth communication. Lastly, techniques for affordable packaging and testing sub-millimeter wave systems are suggested based on experimental demonstrations.

show abstract

System-Level Considerations

D’heer,

Reynaert

2024

Analog Circuits and Signal Processing

View full text Add to dashboard Cite

A 120-Gb/s 100–145-GHz 16-QAM Dual-Band Dielectric Waveguide Interconnect With Package Integrated Diplexers in Intel 16

Cited by 14 publications

References 11 publications

Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits

Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits

CMOS Platform for Everyday Applications Using Submillimeter Electromagnetic Waves

System-Level Considerations

Contact Info

Product

Resources

About