A 105-GHz VCO With 9.5% Tuning Range and 2.8-mW Peak Output Power in a 65-nm Bulk CMOS Process

Adnan, Muhammad; Afshari, Ehsan

doi:10.1109/tmtt.2014.2309940

Cited by 49 publications

(37 citation statements)

References 23 publications

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“…14: (11) (12) (13) In (13), the and the of the effective capacitances are increased by the factors of and , respectively. At the same time, the amount of the capacitance change is also increased due to its denominator of .…”

Section: Transformer-based Vco For Wide Tuning Rangementioning

confidence: 99%

“…By using an n-stage ring oscillator, the phase of a gain stage is adjusted to the optimum value [10], [12]. In other previous works, the optimum phase has been obtained by the insertion of a transmission line between gate and drain [9], [11], [13]. The 2nd harmonic signal loss due to the low impedance of a gate of a VCO transistor has been considered as well [8], [9], [11].…”

Section: Introductionmentioning

confidence: 99%

“…To overcome this problem, variable phase delays between adjacent stages have been introduced to achieve a wide tuning range while obtaining high power [8], [9], [13]. However, this approach also has a limitation because the Q factor of the respective coupled oscillator should be low to allow a wide tuning range, which leads to small [8].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Design and Analysis of 239 GHz CMOS Push-Push Transformer-Based VCO With High Efficiency and Wide Tuning Range

Koo

Kim

Hong

2015

IEEE Trans. Circuits Syst. I

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A push-push transformer-based voltage-controlled oscillator (VCO) is proposed and analyzed to achieve high efficiency and a wide tuning range at sub-terahertz (THz) frequencies.Analyses show that the coupling factor of the transformer to obtain high output power has to be carefully chosen by consideration of gate-to-drain voltage gain as well as matching impedances seen from the drain and to the gate of a VCO transistor at the 2nd harmonic frequency . Analysis also shows that the transformer-based resonator allows a wide tuning range. In addition, it has been shown that the introduction of a parallel inductor to a varactor leads to high and low phase noise. The proposed 239 GHz VCO with a 65 nm CMOS process demonstrates the high efficiency of 1.45%, the of 4.8 dBm, and the wide tuning range of 12.5% with a supply voltage of 1.2 V.Index Terms-High efficiency, J-band, millimeter wave, push-push oscillator, terahertz, transformer, voltage-controlled oscillator (VCO), wide tuning range.

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Section: Transformer-based Vco For Wide Tuning Rangementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Design and Analysis of 239 GHz CMOS Push-Push Transformer-Based VCO With High Efficiency and Wide Tuning Range

Koo

Kim

Hong

2015

IEEE Trans. Circuits Syst. I

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“…A loop of coupled and mutually injection-locked oscillator was recently proposed. A low phase noise of −92 dBc/Hz at 1-MHz offset from a 100-GHz carrier frequency was reported [20].…”

Section: High-frequency Generationmentioning

confidence: 96%

Recent progress and prospects of terahertz CMOS

Fujishima

Amakawa

2015

IEICE Electron. Express

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Recent progress and prospects of terahertz CMOS integrated circuits is reviewed. The development of terahertz CMOS is somewhat different from the conventional digital and RF CMOS evolution, in that it is not fueled as much by technology scaling. Rather, the key enablers are progress in high-frequency device characterization and modeling techniques and also in design techniques near transistor's active operation limit, f max .

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“…As a result, the phase noise and the loop gain will be improved. In [167], a high tuning range and high output power VCO is proposed. The tuning range is enlarged by exploiting either a variable capacitor or controlling the phase/delay between the coupled oscillators.…”

Section: Voltage Control Oscillator (Vco)mentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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Abstract:In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs.

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A 105-GHz VCO With 9.5% Tuning Range and 2.8-mW Peak Output Power in a 65-nm Bulk CMOS Process

Cited by 49 publications

References 23 publications

Design and Analysis of 239 GHz CMOS Push-Push Transformer-Based VCO With High Efficiency and Wide Tuning Range

Design and Analysis of 239 GHz CMOS Push-Push Transformer-Based VCO With High Efficiency and Wide Tuning Range

Recent progress and prospects of terahertz CMOS

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

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