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Gnecco, Enrico; Bennewitz, Roland; Gyalog, T.; Meyer, Ernst

doi:10.1088/0953-8984/13/31/202

Cited by 197 publications

(155 citation statements)

References 111 publications

(119 reference statements)

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“…Such hysteretic behavior, shown in more detail on Fig. 2(c), can occur spontaneously without any intervention on our part and is reminiscent of atomic friction [23,24]. As it turns out, the hysteretic behavior is very short lived as the nanotube is cycled.…”

mentioning

confidence: 64%

Interlayer Forces and Ultralow Sliding Friction in Multiwalled Carbon Nanotubes

et al. 2006

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We describe interlayer force measurements during prolonged, cyclic telescoping motion of a multiwalled carbon nanotube. The force acting between the core and the outer casing is modulated by the presence of stable defects and generally exhibits ultralow friction, below the measurement limit of 1:4 10 ÿ15 N=atom and total dissipation per cycle lower than 0:4 meV=atom. Defects intentionally introduced in the form of dangling bonds lead to temporary mechanical dissipation, but the innate ability of nanotubes to self heal rapidly optimizes the atomic structure and restores smooth motion.

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confidence: 64%

Interlayer Forces and Ultralow Sliding Friction in Multiwalled Carbon Nanotubes

et al. 2006

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“…[1][2][3] Energy is dissipated by conversion of kinetic energy of the moving bodies into lattice vibrations or phonons ͑heat͒. Even before contact is established, fluctuating electric fields emanating from charges in the two bodies exert forces on each other that produce work ͑dissipation-fluctuation theorem͒.…”

Section: Introductionmentioning

confidence: 99%

Influence of carrier density on the friction properties of siliconpnjunctions

Park

Ogletree

et al. 2007

Phys. Rev. B

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We present experimental results showing a significant dependence of the friction force on charge carrier concentration in a Si semiconductor sample containing p-andn-type regions. The carrier concentration was controlled through application of forward or reverse bias voltages in the p and n regions that caused surface band bending in opposite directions. Excess friction is observed only in the highly doped p regions when in strong accumulation. The excess friction increases with tip-sample voltage, contact strain, and velocity. The sample is an oxide-passivated Si (100) wafer patterned with arrays of 2-μm-wide highly doped p-type strips with a period of 30 μm in a nearly intrinsic n-type substrate. The countersurface is the tip of an atomic force microscope coated with conductive titanium nitride. The excess friction is not associated with wear or damage of the surface. The results demonstrate the possibility of electronically controlling friction in semiconductor devices, with potential applications in nanoscale machines containing moving parts. We present experimental results showing a significant dependence of the friction force on charge carrier concentration in a Si semiconductor sample containing p-and n-type regions. The carrier concentration was controlled through application of forward or reverse bias voltages in the p and n regions that caused surface band bending in opposite directions. Excess friction is observed only in the highly doped p regions when in strong accumulation. The excess friction increases with tip-sample voltage, contact strain, and velocity. The sample is an oxide-passivated Si ͑100͒ wafer patterned with arrays of 2-m-wide highly doped p-type strips with a period of 30 m in a nearly intrinsic n-type substrate. The countersurface is the tip of an atomic force microscope coated with conductive titanium nitride. The excess friction is not associated with wear or damage of the surface. The results demonstrate the possibility of electronically controlling friction in semiconductor devices, with potential applications in nanoscale machines containing moving parts.

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“…Atomic force microscopy ͑AFM͒ is particularly suited for this investigation, since it makes possible both the measurement of tribological properties and surface visualization at the nanometer scale. [1][2][3][4] One can thus detect the onset of surface damage-inelastic deformation-with atomic-scale precision. [5][6][7][8] Previous experiments with well characterized surfaces carried out in ultrahigh vacuum ͑UHV͒ have shown that the relation between friction force and contact area can be described by the Derjaguin-Müller-Toporov 3,9 ͑DMT͒ or the Johnson-Kendall-Roberts ͑JKR͒ model, 10,11 depending on the adhesion energy and on the hardness of the contacting materials.…”

Section: Introductionmentioning

confidence: 99%

Elastic and inelastic deformations of ethylene-passivated tenfold decagonalAl−Ni−Coquasicrystal surfaces

et al. 2005

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The adhesion and friction force properties between a tenfold Al-Ni-Co decagonal quasicrystal and a titanium nitride (TiN)-coated tip were investigated using an atomic force microscope in ultrahigh vacuum. To suppress the strong chemical adhesion found in the clean quasicrystal surfaces, the sample was exposed to ethylene that formed a protective passivating layer. We show that the deformation mechanism of the tip-substrate junction changes from elastic to inelastic at a threshold pressure of 3.8 to 4.0 GPa. Images of the indentation marks left above the threshold pressure indicate the absence of new steps, and indicate that surface damage is not accompanied by formation of slippage planes or dislocations, as found in plastically deforming crystalline materials. This is consistent with the lack of translational periodicity of quasicrystals. The work of adhesion in the inelastic regime is five times larger than in the elastic one, plausibly as a result of the displacement of the passivating layer. In the elastic regime, the friction dependence on load is accurately described by the Derjaguin-Müller-Toporov (DMT) model, consistent with the high hardness of both the TiN tip and the quasicrystal sample. Above the threshold pressure, the friction versus load curve deviates from the DMT model, indicating that chemical bond formation and rupture contribute to the energy dissipation. The adhesion and friction force properties between a tenfold Al-Ni-Co decagonal quasicrystal and a titanium nitride ͑TiN͒-coated tip were investigated using an atomic force microscope in ultrahigh vacuum. To suppress the strong chemical adhesion found in the clean quasicrystal surfaces, the sample was exposed to ethylene that formed a protective passivating layer. We show that the deformation mechanism of the tip-substrate junction changes from elastic to inelastic at a threshold pressure of 3.8 to 4.0 GPa. Images of the indentation marks left above the threshold pressure indicate the absence of new steps, and indicate that surface damage is not accompanied by formation of slippage planes or dislocations, as found in plastically deforming crystalline materials. This is consistent with the lack of translational periodicity of quasicrystals. The work of adhesion in the inelastic regime is five times larger than in the elastic one, plausibly as a result of the displacement of the passivating layer. In the elastic regime, the friction dependence on load is accurately described by the Derjaguin-Müller-Toporov ͑DMT͒ model, consistent with the high hardness of both the TiN tip and the quasicrystal sample. Above the threshold pressure, the friction versus load curve deviates from the DMT model, indicating that chemical bond formation and rupture contribute to the energy dissipation.

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Cited by 197 publications

References 111 publications

Interlayer Forces and Ultralow Sliding Friction in Multiwalled Carbon Nanotubes

Interlayer Forces and Ultralow Sliding Friction in Multiwalled Carbon Nanotubes

Influence of carrier density on the friction properties of siliconpnjunctions

Elastic and inelastic deformations of ethylene-passivated tenfold decagonalAl−Ni−Coquasicrystal surfaces

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