2000
DOI: 10.1023/a:1004889500361
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Cited by 32 publications
(12 citation statements)
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References 7 publications
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“…The CNTs strongly interacted with the electric field and become increasingly laterally dispersed by up to 20 µm in some cases, though little alignment was evident. The similarly wide distribution of catalyst particles would also suggest that the catalyst also interacts strongly with the field and that tip growth is ultimately preferential, supporting the posits of Chen et al [35]. T-CVD synthesis was then undertaken with a horizontal bias (~2 V/µm) applied during growth.…”
Section: Resultssupporting
confidence: 59%
See 1 more Smart Citation
“…The CNTs strongly interacted with the electric field and become increasingly laterally dispersed by up to 20 µm in some cases, though little alignment was evident. The similarly wide distribution of catalyst particles would also suggest that the catalyst also interacts strongly with the field and that tip growth is ultimately preferential, supporting the posits of Chen et al [35]. T-CVD synthesis was then undertaken with a horizontal bias (~2 V/µm) applied during growth.…”
Section: Resultssupporting
confidence: 59%
“…Few comprehensive attempts have been made in the literature to explain the orientation mechanism involved. Chen et al [35] proposed a so-called “kite mechanism”. Here the catalyst particle, located at the nanotube apex, is drawn in the direction of the prevailing electric field.…”
Section: Introductionmentioning
confidence: 99%
“…66,70,89 The sidewall deposition of carbon films was first reported by Chen et al in a high temperature, high pressure, hot filament PECVD process. 87 They observed formation of conical structures, shown in Fig. 25, which had graphitic carbon branches due to sidewall deposition during growth.…”
Section: In Situ Pecvd Coatings and Surface Modificationmentioning
confidence: 98%
“…Some degree of sidewall deposition is practically unavoidable in PECVD processes involving high aspect ratio structures, thus minimizing sidewall deposition requires significant effort if clean, graphitic surfaces are desired. There are essentially two types of thin films that get deposited on carbon nanostructure sidewalls: ͑1͒ carbon films from the source gas, 67,68,87,88 as mentioned in Sec. II C 3 and ͑2͒ compounds of redeposited substrate material, for instance silicon, which can react with the nitrogen from the ammonia etchant gas to form Si x N y coatings on the surface.…”
Section: In Situ Pecvd Coatings and Surface Modificationmentioning
confidence: 99%
“…The sample was negatively biased relative to the cathode in the range 25-40 V. This allowed extracting a constant ionic beam that impinged the surface of the sample. The literature provides some other references of similar set up for carbon film growth [19][20][21][22][23][24][25][26][27][28][29][30][31][32]. It was shown elsewhere that the nature and the morphology of the nanostructures either grown or redeposited after sputtering and etching was strongly affected by the ammonia concentration in the gas mixture, by the nature, the thickness and the mode of deposition of the TM (either Fe or Co) [33].…”
Section: Graphitic Carbon Depositionmentioning
confidence: 99%