92-GHz-Dynamic and 72-GHz-Static Frequency Dividers Using 5.4-ps-ECL Self-Aligned SEG SiGe HBTs

Abstract

A dynamic frequency divider with a maximum operating frequency of up to 92 GHz and a static frequency divider with a maximum operating frequency of up to 72 GHz were developed for future millimeter-wave communication systems. These frequency dividers were fabricated by using self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistors (HBTs). By applying a high-boron-doping base and optimizing the thickness of the Si-cap layer, a 130-GHz cutoff frequency and an ECL gate delay time of 5.4 ps were achieved for these SiGe HBTs.