85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications

Abstract

We demonstrate for the first time 85nm gate length enhancement and depletion mode InSb quantum well transistors with unity gain cutoff frequency, f T , of 305 GHz and 256 GHz, respectively, at 0.5V V DS , suitable for high speed, very low power logic applications. The InSb transistors demonstrate 50% higher unity gain cutoff frequency, f T , than silicon NMOS transistors while consuming 10 times less active power.

1 [micro sign]m gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 [micro sign]S/μm

“…Possible alternatives include Ge, GaAs, InGaAs, InAs, InSb, GaN, and perhaps others [2][3][4][5][6][7][8]. Recently published results from high performance flatband-mode [9] In 0.3 Ga 0.7 As channel enhancement-mode MOSFETs on GaAs substrate conclusively demonstrate that the historical issue of Fermi-level pinning at the GaAs/dielectric interface can be overcome [10].…”

Zero-field spin splitting and spin-dependent broadening in high-mobilityInSb/In1−xAlxSbasymmetric quantum well heterostruct

“…Device architectures thus rely on insulated gate electrodes much like conventional FETs. Recent advances in InSb QW FET technology have demonstrated improvements in performance over Si counterparts based on equivalent device scales, 7 making this system a promising candidate for future spintronic applications.…”

Group III–V Semiconductor High Electron Mobility Transistor on Si Substrate

“…Measurement of the fabricated quantum dot device has coulomb blockade efect of 4.2 kA [19]. Fabricated InAs/InSb nanowire heterostructure FET shows unipolar and bipolar operation with the temperature-dependent electrical measurements by applying bias on the InAs side and InSb side.…”

“…To make the device perform beter the gate length of the InSb quantum well transistors was reduced to 0.2 µm, which resulted in the device exhibiting high electron mobility of 30,000 cm 2 /V s with a sheet carrier density of 1 ×1012 cm −2 [19,20]. Modiied approaches have been adopted…”