600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Tang, Zhikai; Jiang, Qimeng; Lu, Yunyou; Huang, Sen; Yang, Shu; Tang, Xi; Chen, Kevin J.

doi:10.1109/led.2013.2279846

Cited by 236 publications

(103 citation statements)

References 17 publications

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“…A new passivation structure based on surface trap compensation by polarization charges has been demonstrated with an AlN/SiN x stack, in which the monocrystal-like polarized AlN epitaxial film is deposited by plasma enhanced atomic layer deposition (PEALD) at 300°C and the SiN x is deposited by PECVD at 300°C [7], [8]. This passivation has been shown to deliver effective current collapse suppression at high drain bias stress and high temperatures under both soft-and hard-switching operations.…”

Section: Introductionmentioning

confidence: 99%

Compatibility of AlN/SiN_xPassivation With LPCVD-SiN_xGate Dielectric in GaN-Based MIS-HEMT

Hua

Liu

et al. 2016

IEEE Electron Device Lett.

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In this letter, we demonstrate an integrated process that illustrates the compatibility of AlN/SiN x passivation with high-performance (i.e. low leakage and high breakdown) low-pressure chemical vapor deposition (LPCVD) SiN x gate dielectric for GaN-based MIS-HEMT. It is shown that the AlN/SiN x passivation structure maintains its superior capability of suppressing the current collapse after enduring high temperature of 780°C during the LPCVD-SiN x deposition. The AlN/SiN x passivation is shown to be significantly better than the LPCVD-SiN x passivation by delivering small dynamic R ON degradation, especially under high drain bias switching with V DS > 100 V.Index Terms-Gallium nitride, MIS-HEMT, aluminum nitride, silicon nitride, passivation.

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Section: Introductionmentioning

confidence: 99%

Compatibility of AlN/SiN_xPassivation With LPCVD-SiN_xGate Dielectric in GaN-Based MIS-HEMT

Hua

Liu

et al. 2016

IEEE Electron Device Lett.

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“…1 In particular, high-density and high-mobility two dimensional electron gas (2DEG) generated at the AlGaN/GaN interface enables us to realize power switching transistors having extremely low on-state resistance applicable to next generation power conversion systems. [2][3][4][5] To achieve normally-off operation, metal-oxidesemiconductor (MOS) gate structures are absolutely required for suppressing gate leakage current under a forward gate bias operation. For realizing a good insulated gate, we should consider material properties of insulators: wide bandgap leading to large band offset against GaN-based-materials, high breakdown field, and high permittivity.…”

Section: Introductionmentioning

confidence: 99%

Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

Hori¹,

Yatabe²,

Hashizume³

2013

Journal of Applied Physics

154

120

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We have investigated the relationship between improved electrical properties of Al 2 O 3 /AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) and electronic state densities at the Al 2 O 3 /AlGaN interface evaluated from the same structures as the MOS-HEMTs. To evaluate Al 2 O 3 /AlGaN interface state densities of the MOS-HEMTs, two types of capacitance-voltage (C-V) measurement techniques were employed: the photo-assisted C-V measurement for the near-midgap states and the frequency dependent C-V characteristics for the states near the conduction-band edge. To reduce the interface states, an N 2 O-radical treatment was applied to the AlGaN surface just prior to the deposition of the Al 2 O 3 insulator. As compared to the sample without the treatment, the N 2 O-radical treated Al 2 O 3 /AlGaN/GaN structure showed smaller frequency dispersion of the C-V curves in the positive gate bias range. The state densities at the Al 2 O 3 /AlGaN interface were estimated to be 1 Â 10 12 cm À2 eV À1 or less around the midgap and 8 Â 10 12 cm À2 eV À1 near the conduction-band edge. In addition, we observed higher maximum drain current at the positive gate bias and suppressed threshold voltage instability under the negative gate bias stress even at 150 C. Results presented in this paper indicated that the N 2 O-radical treatment is effective both in reducing the interface states and improving the electrical properties of the Al 2 O 3 /AlGaN/GaN MOS-HEMTs. V C 2013 AIP Publishing LLC. [http://dx

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“…Besides, the high-frequency performance of AlGaN channel HEMTs has also been investigated [4,12]. Noticeably, although GaN MIS-HEMTs with SiN x [13], SiO 2 [14], HfO 2 [15], ZrO 2 [16], LaAlO 3 [17], etc. as insulators have been proposed to suppress the gate leakage and RF current collapse, enhance breakdown field, and improve interfacial quality, yet AlGaN channel MIS-HEMTs have never been reported.…”

Section: Introductionmentioning

confidence: 99%

AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance

Zhang

et al. 2015

IEICE Electron. Express

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We report on AlGaN channel metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for the first time. The insulator of 10-nm SiN x was deposited by plasma enhanced chemical vapor deposition, which induced a low reverse and forward Schottky leakage. A very high breakdown electric field of 1.8 MV/cm was reached with a gatedrain distance of 2 µm. The breakdown voltage increased non-linearly with the gate-drain distance and reached 1661 V with a gate-drain distance of 20 µm. As temperature increases from 25 to 275°C, the saturation drain current decreases slightly by 20% from 211 to 169 mA/mm and the onresistance increases only by 24%.

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600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Cited by 236 publications

References 17 publications

Compatibility of AlN/SiN_xPassivation With LPCVD-SiN_xGate Dielectric in GaN-Based MIS-HEMT

Compatibility of AlN/SiN_xPassivation With LPCVD-SiN_xGate Dielectric in GaN-Based MIS-HEMT

Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance

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600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Cited by 236 publications

References 17 publications

Compatibility of AlN/SiNxPassivation With LPCVD-SiNxGate Dielectric in GaN-Based MIS-HEMT

Compatibility of AlN/SiNxPassivation With LPCVD-SiNxGate Dielectric in GaN-Based MIS-HEMT

Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance

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Compatibility of AlN/SiN_xPassivation With LPCVD-SiN_xGate Dielectric in GaN-Based MIS-HEMT

Compatibility of AlN/SiN_xPassivation With LPCVD-SiN_xGate Dielectric in GaN-Based MIS-HEMT