4H SiC Epitaxial Growth with Chlorine Addition

Via, F. La; Galvagno, G.; Fóti, G.; Mauceri, Marco; Leone, Stefano; Pistone, Giuseppe; Abbondanza, Giuseppe; Veneroni, Alessandro; Masi, Maurizio; Valente, Gian Luca; Crippa, Danilo

doi:10.1002/cvde.200506465

Cited by 85 publications

(59 citation statements)

References 13 publications

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“…II B, new epitaxial processes that overcome some of these limitations have been developed 45,75 which represent, together with the step-controlled growth mode, a technological breakthrough in SiC epitaxies. In these new processes, the growth rate has been increased with respect to the standard ones by increasing the silane flow combined with the introduction of Chloride-based chemistry, either adding HCl 76 to the Silane precursor or substituting it with trichlorosilane (TCS).…”

Section: High Growth Rate Epitaxy Processmentioning

confidence: 99%

Mechanisms of growth and defect properties of epitaxial SiC

Via

Camarda

Magna

2014

Applied Physics Reviews

105

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Section: High Growth Rate Epitaxy Processmentioning

confidence: 99%

Mechanisms of growth and defect properties of epitaxial SiC

Via

Camarda

Magna

2014

Applied Physics Reviews

105

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“…However, despite the importance of this topic, scarce experimental and theoretical information is present in the literature. La Via et al 1 have shown by deep level transient spectroscopy (DLTS) that both the Z 1=2 and EH 6=7 levels are present in n-type 4H-SiC grown by using HCl as a precursor and that new deep levels, related to Cl, are not observed, at least in the 10 13 cm À3 range. Subsequently, by employing density functional theory (DFT), it was found that Cl preferably occupies a C-site rather than a Si-site and behaves as a triple donor.…”

Section: Introductionmentioning

confidence: 99%

Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC

Alfieri

Kimoto

2012

Journal of Applied Physics

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We report on a deep level transient spectroscopy study of Cl-implanted n-and p-type 4H-SiC epilayers. Samples were electrically characterized after each step of an isochronal annealing series, between room temperature and 1800 8C, and twelve deep traps were detected. Of these, seven traps were found in n-type material, ranging from 0.15 to 1.6 eV below the conduction band minimum (E C ), and five were detected in p-type material, located between 0.5 and 1.7 eV above the valence band maximum (E V ). Besides the presence of the well known Z 1=2 and EH 6=7 levels in n-type 4H-SiC and of the D-center in p-type samples, we found that Cl implantation gives rise to three new traps in n-type material at E C À 0:37 eV; E C À 1:06 eV, and E C À 1:3 eV and one new level in p-type at E V þ 0:97 eV. These traps are persistent after annealing at 1800 8C, and no data were found in the previous experimental studies reported in the literature. The possible involvement of Cl in the microscopic structure of these defects is discussed based on a depth profiling analysis of their concentration. V C 2012 American Institute of Physics. [http://dx.

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“…6). The effect of Cl/Si ratio on the morphology of the epitaxial layers 31 and on the growth rate 32,33 has been reported previously. A decrease in growth rate for lower Cl/Si ratio 33 due to insufficient formation of SiCl 2 and for higher Cl/Si ratio 32 due to etching of the growing epitaxial layers was found.…”

Section: à2mentioning

confidence: 99%

Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

Yazdanfar

Ivanov

Pedersen

et al. 2013

Journal of Applied Physics

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By carefully controlling the surface chemistry of the chemical vapor deposition process for silicon carbide (SiC), 100 lm thick epitaxial layers with excellent morphology were grown on 4 off-axis SiC substrates at growth rates exceeding 100 lm/h. In order to reduce the formation of step bunching and structural defects, mainly triangular defects, the effect of varying parameters such as growth temperature, C/Si ratio, Cl/Si ratio, Si/H 2 ratio, and in situ pre-growth surface etching time are studied. It was found that an in-situ pre growth etch at growth temperature and pressure using 0.6% HCl in hydrogen for 12 min reduced the structural defects by etching preferentially on surface damages of the substrate surface. By then applying a slightly lower growth temperature of 1575 C, a C/Si ratio of 0.8, and a Cl/Si ratio of 5, 100 lm thick, step-bunch free epitaxial layer with a minimum triangular defect density and excellent morphology could be grown, thus enabling SiC power device structures to be grown on 4 off axis SiC substrates. V C 2013 AIP Publishing LLC.

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4H SiC Epitaxial Growth with Chlorine Addition

Cited by 85 publications

References 13 publications

Mechanisms of growth and defect properties of epitaxial SiC

Mechanisms of growth and defect properties of epitaxial SiC

Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC

Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

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