DOI: 10.1109/isscc.1982.1156284
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Abstract: RECENTLY, the dominance of two terminal devices at millimeter wave frequencies has been challenged by the GaAs FET. Diode technology has matured and performance is rapidly approaching fundamental limitations. Further significant advances in low noise performance will be achieved by using the comparatively young millimeter wave FET technology. The development of new FET device structures' 2 and technology3 allows the realization of FET components at millimeter-wave frequencies with performance rivaling that of…

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