3D silicon pixel sensors: Recent test beam results

Hansson, P.; Balbuena, J.P.; Barrera, C. Oropeza; Bolle, E.; Borri, M.; Boscardin, M.; Chmeissan, M.; Betta, G.-F. Dalla; Darbo, G.; Via, C. Da; Devetak, E.; DeWilde, B.; Su, D.; Dorholt, O.; Fazio, S.; Fleta, C.; Gemme, C.; Giordani, M. P.; Gjersdal, H.; Grenier, P.; Grinstein, S.; Hasi, J.; Helle, Karen B.; Huegging, F.; Jackson, P.; Kenney, C.; Kocian, M.; Korolkov, I.; Rosa, A. La; Mastroberardino, A.; Micelli, A.; Nellist, C.; Nordahl, P.; Rivero, Fernando; Røhne, O.; Sandaker, H.; Silverstein, D.; Sjoebaek, K. N.; Slaviec, T.; Stupak, J.; Troyano, I.; Tsung, J.-W.; Tsybychev, D.; Wermes, N.; Young, C.

doi:10.1016/j.nima.2010.06.321

Cited by 9 publications

(7 citation statements)

References 13 publications

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“…In 2009 three beam tests have been performed, and results have been previously reported in [5], [6], [7]. This paper is concerned with the first beam test of 2010, describing the setup and selected results for irradiated 3D sensors fabricated at Fondazione Bruno Kessler (FBK) in Trento, Italy [8].…”

Section: Introductionmentioning

confidence: 99%

3D-FBK pixel sensors: Recent beam tests results with irradiated devices

Micelli

Helle

Sandaker

et al. 2011

Nuclear Instruments and Methods in Physics Research Section A:

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The Pixel detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider (LHC), and plays a key role in the reconstruction of the primary and secondary vertices of short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration (VLSI) and MicroElectro-Mechanical-Systems (MEMS) where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 readout chip, is compared to that observed before irradiation in a previous beam test.

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Section: Introductionmentioning

confidence: 99%

3D-FBK pixel sensors: Recent beam tests results with irradiated devices

Micelli

Helle

Sandaker

et al. 2011

Nuclear Instruments and Methods in Physics Research Section A:

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“…The high momentum of the beam particles minimizes the effect of multiple scatterring which is a pre-requisite for high precision tracking measurements. Previous beam tests results have already been reported [5].…”

Section: Test Beam Instrumentationmentioning

confidence: 87%

Test beam results of 3D silicon pixel sensors for the ATLAS upgrade

Grenier¹,

Alimonti²,

Barbero³

et al. 2011

Nuclear Instruments and Methods in Physics Research Section A:

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Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.

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“…The expected collected charge in the ''Edge'' region is then of $ 8 ke, 5 which corresponds to a signal large enough to trigger the FEI4 read-out chip. Both in the ''Pixel'' and in the ''Edge'' region the 4 The trenches are doped with a four-quadrant ion implantation of boron ions.…”

Section: Charge Collection Efficiencymentioning

confidence: 99%

“…Both in the ''Pixel'' and in the ''Edge'' region the 4 The trenches are doped with a four-quadrant ion implantation of boron ions. 5 The MPV for the charge created by a MIP in 200 mm is 16 ke. effect of trapping can be observed: the collected charge reaches a plateau at high voltage, but there the CCE is not of 100%.…”

Section: Charge Collection Efficiencymentioning

confidence: 99%

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Development of edgeless n-on-p planar pixel sensors for future ATLAS upgrades

Bomben

Bagolini

Boscardin

et al. 2013

Nuclear Instruments and Methods in Physics Research Section A:

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a b s t r a c tThe development of n-on-p ''edgeless'' planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the ''active edge'' technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of 1 Â 10 15 n eq =cm 2 comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb À 1 ) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500 V, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach.

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3D silicon pixel sensors: Recent test beam results

Cited by 9 publications

References 13 publications

3D-FBK pixel sensors: Recent beam tests results with irradiated devices

3D-FBK pixel sensors: Recent beam tests results with irradiated devices

Test beam results of 3D silicon pixel sensors for the ATLAS upgrade

Development of edgeless n-on-p planar pixel sensors for future ATLAS upgrades

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