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“…The improvements in tProg are realized by combinations of WL and BL bias time reduction, fine tuning of the programming voltage compensating cell characteristics' variability across the pillar and the reduction in the program verify operations. Figure 18 shows the center XDEC (WLdriver) architecture which shortens the time for WL loading [31]. The latter (the steep increase in the write bandwidth) is realized by the increased number of planes owing to the CMOS under Array (CuA) architecture.…”
Section: Write Bandwidth Is Provided Bymentioning
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“…The improvements in tProg are realized by combinations of WL and BL bias time reduction, fine tuning of the programming voltage compensating cell characteristics' variability across the pillar and the reduction in the program verify operations. Figure 18 shows the center XDEC (WLdriver) architecture which shortens the time for WL loading [31]. The latter (the steep increase in the write bandwidth) is realized by the increased number of planes owing to the CMOS under Array (CuA) architecture.…”
Section: Write Bandwidth Is Provided Bymentioning
“…The 3D NAND flash was developed more than ten years ago in 2007 [ 10 ], and the first TLC 3D BiCS flash memory with 32 stacked layers was demonstrated by Toshiba in 2015 [ 11 ]. Currently, 174 staking storage layers [ 1 , 2 ] as well as HLC operation mode [ 4 ] have been realized and demonstrated. So far, 3D NAND flash has been utilized in many kinds of storage products, especially in smartphones, personal computers, and data centers.…”
Section: Background and Related Workmentioning
“…For charge-trap (CT) 3D NAND flash memory, the endurance can largely be improved because the effects of the tunneling layer degradations are weak, and the program time can be faster because the effects of inter-cell interference (ICI) are well suppressed with larger cell-to-cell space. Recently, a 3D NAND with more than 170 layers was announced by the NAND flash makers [ 1 , 2 ]; more impressively, quadruple-level-cell (QLC, 4 bits/cell), penta-level-cell (PLC, 5 bits/cell), and even hexa-level-cell (HLC, 6 bits/cell) operation modes have been demonstrated [ 3 , 4 ]. All these fundamental developments as well as design-technology co-optimizations (DTCO) will drive 3D NAND flash to the mainstream non-volatile memories in the near future [ 5 ].…”
Section: Introductionmentioning
“…However, this scheme induces new problem such as more severe soft programming [13,14]. For this reason, 'Conventional 3' was recently proposed to improve read/write performance and soft programming, but there is no specific physical analysis [15]. Therefore, we performed physical-based TCAD device simulation and proposed new read schemes based on 'Conventional 3' [16].…”
Section: Introductionmentioning