1980
DOI: 10.1109/isscc.1980.1156107
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Abstract: ADVANCES IN MEMORY SYSTEMS in large and microcomputersand peripheral equipment have accelerated the developments of 16K static RAMs based on double-poly NMOS technologies"''3.However, difficult technological problems exist in large capacity static RAMs, such as high operating power, relatively complex processes, and soft errors due to alpha particles. This paper will report on 16K static RAMS based on HCMOS technology previously described4". The cell layout and a cross section are shown in Figure 1. Current t…

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