25-42 GHz GaAs heterojunction bipolar transistor low phase noise push-push VCOs

Smith, Daniel M.; Canyon, J.; Tait, D.

doi:10.1109/mwsym.1989.38826

Cited by 17 publications

(1 citation statement)

References 3 publications

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“…This can be, for example, double-sided microstrip resonators [15]- [18] or dielectric resonators (DRs) [14], [19], [20], as well as appropriate transmission lines [13], [4]. Another possibility is to design the impedances of the connecting output network in such a way that the conditions for oscillation are fulfilled for the odd-mode impedance only, but not for the even-mode impedance [4], [6], [10], [21], [22]. The phase-coupling network shown in Fig.…”

Section: Push-push Principlementioning

confidence: 99%

Hybrid millimeter-wave push-push oscillators using silicon-germanium HBTs

Sinnesbichler

2003

IEEE Trans. Microwave Theory Techn.

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Push-push design has proven to be an efficient way to extend the usable frequency range of active devices for oscillator applications. In this paper, the basic principles of push-push oscillator design are explained and various possibilities to realize this concept are shown. Several examples of hybrid millimeter-wave push-push oscillators using SiGe HBTs as active devices are discussed. Details on large-signal modeling of the SiGe HBTs using both a vertical bipolar integrated-circuit model, as well as a customized large-signal model are given. Measured key performance data of microstrip resonator oscillators at 57 and 58 GHz are output power levels of +1 dBm and single-sideband phase-noise figures (1-MHz offset from carrier) of 106 and 108 dBm/Hz, respectively. For the dielectric-resonator oscillators, a maximum output power of 8 dBm and an optimum phase noise of 112 dBc/Hz (14-dBm output power), as well as a mechanical tuning range of 500 MHz were measured.

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