220-to-330-GHz Manifold Triplexer With Wide Stopband Utilizing Ridged Substrate Integrated Waveguides

Holloway, Jack W.; Dogiamis, Georgios C.; Shin, Sanghoon; Han, Ruonan

doi:10.1109/tmtt.2020.2997367

Cited by 25 publications

(17 citation statements)

References 33 publications

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“…6. As can be seen, various matching networks can be exploited and combined with diverse SIW single-band BPFs to develop SIW multiband BPFs and multiplexers based on this scheme, embracing multiport wideband T-junctions based on SIW [14], [15], [16], [17], [18], [19], [20], [21], [22], [23], [24], [25], [26], [27], [28], [29], [30], [31], [32], [33], [34], [35], [36], [37], [38] or microstrip [39], [40], [41], [42], [43], [44], [45], [46], [47], [48], [49], [50], [51], [52], [53] technologies, circulators [31], manifolds [32], coupling apertures [54], [55], switches [56], shared feeding ports [57],…”

Section: A Activities Based On Shunting Schemementioning

confidence: 99%

Substrate Integrated Waveguide Multiband Bandpass Filters and Multiplexers: Current Status and Future Outlook

Zhou

2023

IEEE J. Microw.

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Multiband bandpass filters (BPFs) and multiplexers are essential front-end modules in the development of multifunction, multistandard, and multiband wireless communication, sensing, and positioning systems that are required in current and future intelligent electronics applications. In this paper, numerous implementation schemes and topologies of multiband BPFs and multiplexers, which have been proposed, studied, and developed so far, are holistically summarized and elaborated in terms of their merits and drawbacks. Subsequently, various technical approaches and diverse design methodologies based on substrate integrated waveguide (SIW) technology are thoroughly examined and reviewed with respect to technical features, electrical performances, and practical applications. Finally, future research and development directions and prospects of SIW multiband BPFs and multiplexers are briefly unraveled.

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Section: A Activities Based On Shunting Schemementioning

confidence: 99%

Substrate Integrated Waveguide Multiband Bandpass Filters and Multiplexers: Current Status and Future Outlook

Zhou

2023

IEEE J. Microw.

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“…18a). For example, an 8-pole channelizer using coupled high-Q SIW cavities is demonstrated in [115], which Fig. 18.…”

Section: Packaging Technologies For Silicon-based Thz Systemsmentioning

confidence: 99%

“…High-performance THz passive components using organic chip-packaging process: (a) a 0.5 × 0.5-m 2 panel with 220∼340-GHz channelizer and waveguide launcher structures; (b) Simulated E-field distribution in the channelizer at three channel frequencies; (c) a 3D X-ray image of the channelizer, showing the continuous via technology; (d) measured channelizer response [115], [116].…”

Section: Packaging Technologies For Silicon-based Thz Systemsmentioning

confidence: 99%

Emerging Terahertz Integrated Systems in Silicon

Wang

et al. 2021

IEEE Trans. Circuits Syst. I

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Silicon-based terahertz (THz) integrated circuits (ICs) have made rapid progress over the past decade. The demonstrated basic component performance, as well as the maturity of design tools and methodologies, have made it possible to build high-complexity THz integrated systems. Such implementations are undoubtedly highly attractive due to their low cost and high integration capability; however, their unique characteristics, both advantageous and disadvantageous, also call for research investigations into unconventional systematic architectures and novel THz applications. In this paper, we review Manuscript

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“…Hence less signal power at 390 GHz is transferred to the output port, resulting in the enhancement of the outof-band rejection. Such a low-loss filter with high out-ofband rejection capability is very suitable to realize duplexers or triplexers for THz applications [28], [32].…”

Section: Chebyshev Siw Filter Designmentioning

confidence: 99%

“…As such a high-loss filter is integrated with a THz transmitter or a receiver, it will unavoidably degrade the transmitter's output power and increase the receiver's noise figure. Alternatively, an IC organic packaging process developed at Intel Corporation was utilized to design a ridged SIW and a manifold triplexer operating from 220 to 320 GHz [32]. However, unexpected out-of-band resonances and a discrepancy of 7-dB insertion loss between simulation and measurement are observed in measured results due to the variation of dielectric properties and perturbations of device dimensions.…”

Section: Introductionmentioning

confidence: 99%

Low-Loss Low-Cost Substrate-Integrated Waveguide and Filter in GaAs IPD Technology for Terahertz Applications

Chiu

2021

IEEE Access

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A low-loss and low-cost terahertz (THz) substrate-integrated waveguide (SIW) and a SIW filter implemented in a commercially-available GaAs integrated-passive-devices (IPD) technology are proposed for THz applications. Ellipse vias penetrating through a 100-μm thick GaAs substrate are employed to realize a low-loss SIW. The via's orientation is designed as being transverse, instead of being longitudinal, to the propagation direction of the input wave, which can improve the insertion loss by 2.7 dB at 415 GHz due to lower signal leakage from the waveguide. The proposed SIW is able to provide simulated insertion loss of only 0.39 dB/mm, i.e., 0.14 dB/λg, at 340 GHz. A new SIW filter structure using the ellipse vias is proposed which not only successfully realizes a low-loss fourth-order Chebyshev filter under hard design-rule-check (DRC) rules imposed by the IPD technology, but also can enhance out-of-band rejection by 10.5 dB at 390 GHz as compared with conventional waveguide filters. A slot-coupled coplanar waveguide (CPW) to SIW transition structure without any impedance tuning stub required is also proposed to measure the proposed SIW and SIW filter. The proposed transition structure can give simulated insertion loss of 0.7 dB at 340 GHz while keeping return loss better than 10 dB from 307 to 374 GHz. Eight samples are measured to demonstrate the robustness of the proposed designs against process variations. Experimental results show that the proposed transition structure with a 220-μm long SIW and the SIW filter can provide measured insertion loss of 0.7 and 3.6 dB at 327.5 GHz, respectively. The reasons for the discrepancy between the simulation and measurement results are identified and discussed in detail. As compared with prior works, the proposed SIW and SIW filter exhibit lower loss, lower cost, higher repeatability, higher reliability, and mass-producible capability. To the best of the authors' knowledge, this is the first demonstration of the THz SIW and THz SIW filter designs using a commercially-available and mass-producible IPD technology reported thus far.

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220-to-330-GHz Manifold Triplexer With Wide Stopband Utilizing Ridged Substrate Integrated Waveguides

Cited by 25 publications

References 33 publications

Substrate Integrated Waveguide Multiband Bandpass Filters and Multiplexers: Current Status and Future Outlook

Substrate Integrated Waveguide Multiband Bandpass Filters and Multiplexers: Current Status and Future Outlook

Emerging Terahertz Integrated Systems in Silicon

Low-Loss Low-Cost Substrate-Integrated Waveguide and Filter in GaAs IPD Technology for Terahertz Applications

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