21 dB gain 87 GHz low-noise amplifier using 0.18 [micro sign]m SiGe BiCMOS

Chen, A.Y.-K.; Baeyens, Y.; Chen, Y.-K.; Lin, Jenshan

doi:10.1049/el.2010.0155

Cited by 7 publications

(3 citation statements)

References 4 publications

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“…4 also plots the results of the noise figure of the LNA, which is 8.5 dB at 145 GHz and less than 9.5 dB over 132 -160 GHz. By using the following FoM equation [4], the proposed LNA shows the FoM of 5.41, which compared to recently reported millimetre-wave LNA in silicon with operation frequency beyond 90 GHz ( [5] 0.46, [6] 0.60, [7] 0.56) is the highest one:…”

mentioning

confidence: 89%

Gain-enhanced 132–160 GHz low-noise amplifier using 0.13 [micro sign]m SiGe BiCMOS

Zhang

Xiong²,

Wang

et al. 2012

Electron. Lett.

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A 132 -160 GHz low-noise amplifier (LNA) in 0.13 mm SiGe BiCMOS technology is presented. The gain-boosting technique and 3D grounded-shielding structures have been employed to achieve higher gain with lower power consumption and silicon occupation. The experimental results show that the LNA with a chip area of 400 × 900 mm achieves gain of 21 dB with a 3 dB bandwidth of 28 GHz and noise figure of 8.5 dB at 145 GHz, with total DC power consumption of 14.5 mW.Introduction: In millimetre-wave receiver design, the low-noise amplifier (LNA) is a critical building block that amplifies the received signal and contributes most of the noise figure of the whole receiver. In most previous research, high-performance III -V compound semiconductors were generally utilised for millimetre-wave LNA design. In recent years, with the downscaling of silicon-based device size, its f T and f MAX are rapidly increasing and have been demonstrated to be competitive with those of the III -V compound semiconductors [1]. In addition, with the compatibility with baseband circuit and high-quality passive elements, the silicon-based technology shows the advantage for costeffective highly integrated system-on-chip (SoC). But with the increase of operation frequency, the performance of the circuit has been greatly affected by the lossy silicon substrate and the thin metal loss. Thus, it is a challenge to realise a high gain and low noise figure LNA beyond 100 GHz frequency since the currently available gain of single transistor at such high frequency range is still small. In this Letter, we present a 132 -160 GHz LNA in 0.13 mm SiGe BiCMOS technology. By a gain-boosting technique, the gain of each stage of the LNA has been increased by more than 38.5% and further improved noise performance and power consumption. To improve multi-stage stability and reduce the impact from parasitic effect, a 3D grounded-shielding structure is used. The results show that the LNA has 21 dB peak gain and 8.5 dB noise figure at 145 GHz while the power consumption is 14.5 mW.

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confidence: 89%

Gain-enhanced 132–160 GHz low-noise amplifier using 0.13 [micro sign]m SiGe BiCMOS

Zhang

Xiong²,

Wang

et al. 2012

Electron. Lett.

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“…2) These specifications allow several consumers millimeter-wave applications, such as 60 GHz wireless communication, 77 and 94 GHz imaging to be realized. [3][4][5][6][7][8][9] In order to design circuit successfully at these millimeterwave frequencies, the intrinsic device parameter and model must be extracted accurately from the measurement results. However, at these frequencies, the de-embedding of the extrinsic components such as, pads, input/output interconnects from measurement results become more complicate, due to the greater parasitic effects.…”

Section: Introductionmentioning

confidence: 99%

De-embedding of On-Chip Inductor at Millimeter-Wave Range

Zhang¹,

Xiong²,

Wang

et al. 2012

Jpn. J. Appl. Phys.

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A full matrix calculation based de-embedding methodology for on-chip inductor de-embedding at millimeter-wave range is presented. In this method, all extrinsic elements are subtracted by frequency-independent method. The influence of coupling effects between interconnections which has significant impacts on self-resonance frequency of inductor is subtracted by a new dummy structure. A comparison of different de-embedding methods of millimeter-wave on-chip inductors is performed up to 110 GHz. As compared with common methods, the result shows that the proposed method has good accuracy at high frequency and suitable for millimeter-wave inductor modeling and circuit design.

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“…Compared to the heterojunction bipolar transistor (HBT) LNA in SiGe HBT and InP/InGaAs single HBT (SHBT) technologies, InP/InGaAs double heterojunction bipolar transistors (DHBTs) are attractive for their higher breakdown voltage because of the higher bandgap of InP which is used as the collector [3,4]. The structure of DHBTs can be designed to reach high breakdown voltage and high-frequency performance, which means a higher 1 dB compression point (P 1dB ) and also high gain for the millimetre-wave LNA [5][6][7][8]. In this Letter, a fivestage high gain W-band LNA with P 1dB of 5.8dBm is presented.…”

mentioning

confidence: 99%

5.8 dBm P1 dB, high gain W-band low-noise amplifier using high breakdown voltage InP/InGaAs DHBT technology

Jin¹,

Yao²,

Wu³

et al. 2012

Electronics Letters

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A five-stage W-band low-noise amplifier (LNA) based on the authors' InP/InGaAs double heterojunction bipolar transistors (DHBTs) process is reported. The LNA achieves a peak gain of 33.1 dB and 7.8 dB noise figure at 81GHz. Its output-related 1 dB compression point (P 1dB ) lies at 5.8 dBm. The high gain and linearity of the LNA is mainly attributed to the performance of the DHBTs exhibiting a high breakdown voltage (BVceo . 8.7V), a current gain cutoff frequency ( f T ) of 167GHz, and a maximum oscillation frequency ( f max ) of 265GHz.Introduction: Recently, many millimetre-wave applications have been emerging, such as 77 -81GHz short-range radar and W-band imaging in the 80 -110GHz atmospheric window [1,2]. Especially, millimetrewave applications have a strong need for a low-noise amplifier (LNA). Compared to the heterojunction bipolar transistor (HBT) LNA in SiGe HBT and InP/InGaAs single HBT (SHBT) technologies, InP/InGaAs double heterojunction bipolar transistors (DHBTs) are attractive for their higher breakdown voltage because of the higher bandgap of InP which is used as the collector [3,4]. The structure of DHBTs can be designed to reach high breakdown voltage and high-frequency performance, which means a higher 1 dB compression point (P 1dB ) and also high gain for the millimetre-wave LNA [5][6][7][8]. In this Letter, a fivestage high gain W-band LNA with P 1dB of 5.8dBm is presented. The process of InP/InGaAs DHBTs with high breakdown voltage (BV ceo . 8.7V) and cutoff frequencies f T and f max of 167GHz and 265GHz was developed by our group [9]. By using the process, a 5.8dBm P 1dB LNA was designed and fabricated which achieves 33.1dB gain and 7.8 dB noise figure at 81GHz with a bandwidth of 6GHz.

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21 dB gain 87 GHz low-noise amplifier using 0.18 [micro sign]m SiGe BiCMOS

Cited by 7 publications

References 4 publications

Gain-enhanced 132–160 GHz low-noise amplifier using 0.13 [micro sign]m SiGe BiCMOS

Gain-enhanced 132–160 GHz low-noise amplifier using 0.13 [micro sign]m SiGe BiCMOS

De-embedding of On-Chip Inductor at Millimeter-Wave Range

5.8 dBm P1 dB, high gain W-band low-noise amplifier using high breakdown voltage InP/InGaAs DHBT technology

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