200 V-Depletion mode GaN HEMT on Si

Kachhawa, Pharyanshu; Mishra, Saroj Kumar; Jain, Amber Kumar; Thakur, Rajiv R.; Chaturvedi, Nidhi

doi:10.1109/icee50728.2020.9776649

Cited by 3 publications

(2 citation statements)

References 8 publications

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“…To make ohmic contacts (source and drain), a metal stack of Ti/Al/Ni/Au with a thickness of 20/150/40/50 nm is deposited using an e-beam evaporation system followed by rapid thermal annealing at 830 °C for 30 s in a nitrogen environment that gives the ohmic contact resistance of 5 × 10 −6 ohm per cm 2 . 38 Interdevice isolation has been achieved using bombardment of nitrogen ions using an ion implantation method, which gives an isolation resistance of 10 GΩ. Schottky contacts (gate) have been deposited by a metal stack of Ni/Ti/Au with a thickness of 15/ 20/150 nm using an e-beam evaporation system.…”

Section: Fabrication Of Gan Hemtsmentioning

confidence: 99%

High sensitivity label-free detection of HER2 using an Al–GaN/GaN high electron mobility transistor-based biosensor

et al. 2022

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Section: Fabrication Of Gan Hemtsmentioning

confidence: 99%

High sensitivity label-free detection of HER2 using an Al–GaN/GaN high electron mobility transistor-based biosensor

et al. 2022

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“…Recently, GaN and SiC have emerged as wideband semiconductors which are adopted by the industry for a wide range of high voltage, power, sensing, and RF applications. [2][3][4][5][6][7][8][9] In particular, GaN is playing crucial role in RF power and monolithic microwave integrated circuits area for strategic applications. Theoretically, even better power figures of merits can be achieved with ultra-wide bandgap semiconductors like diamond, AlN, and β-Ga 2 O 3 .…”

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confidence: 99%

Effect of Ar‐Based Reactive Ion Etching on the Ohmic Contacts in Gallium Oxide Field Effect Transistor

Kachhawa,

Jain,

Chaturvedi

2023

Physica Status Solidi (a)

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Herein, ultra‐wideband gap semiconductor β‐gallium oxide (β–Ga2O3) over sapphire ( orientation) is investigated for ohmic contact improvement with the help of argon (Ar)‐based reactive ion etching (RIE). Postannealing effects of these contacts over ( orientation) gallium oxide samples are also investigated. The surface defects and oxygen vacancies generated by Ar etching lead to the formation of as‐deposited ohmic contacts with the Ti/Au metal stack. A contact resistance of 10.52 Ω mm with a specific contact resistivity of 2.24 × 10−4 Ω cm2 is achieved with 10 min Ar RIE prior metallization. However, the contacts further degrade when samples are subjected to annealing. The electrical measurements and energy‐dispersive X‐ray spectroscopy elemental mappings at samples after annealing reveal that it is due to the formation of titanium oxide (TiOx) compound which acts as an insulator and concurrent with the out‐diffusion of Ga and in‐diffusion of gold. These results show the impact of anisotropy of gallium oxide over different annealing temperatures. These results and techniques may pave the way for better ohmic contacts for gallium oxide‐based high‐voltage and high‐power applications.

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AlGaN/GaN HEMT Based Biosensor for Detection of the HER2 Antigen Spiked in Human Serum

Mishra

Kachhawa

Mondal

et al. 2022

IEEE Trans. Electron Devices

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200 V-Depletion mode GaN HEMT on Si

Cited by 3 publications

References 8 publications

High sensitivity label-free detection of HER2 using an Al–GaN/GaN high electron mobility transistor-based biosensor

High sensitivity label-free detection of HER2 using an Al–GaN/GaN high electron mobility transistor-based biosensor

Effect of Ar‐Based Reactive Ion Etching on the Ohmic Contacts in Gallium Oxide Field Effect Transistor

AlGaN/GaN HEMT Based Biosensor for Detection of the HER2 Antigen Spiked in Human Serum

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