Abstract:In this study, a thermal and electrical coupled device solver is developed to simulate the energy transfer mechanism within a GaN FET with a gate length of 0.2 μm. The simulation simultaneously solves a set of hydrodynamic equations (derived from the Boltzmann Transport Equation) and the Poisson equation for electron, optical phonon and acoustic phonon energies, electron number density, electric field and electric potential. This approach has been previously established for gallium arsenide (GaAs) devices [36,… Show more
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