2.7-eV luminescence in as-manufactured high-purity silica glass

Tohmon, Ryoichi; Shimogaichi, Yasushi; Mizuno, H.; Ohki, Yoshimichi; Nagasawa, Kaya; Hama, Yoshimasa

doi:10.1103/physrevlett.62.1388

Cited by 255 publications

(129 citation statements)

References 12 publications

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“…These optical transitions correspond to three spectral regions: ͑i͒ from 1.85 eV ͑670 nm͒ to 2.0 eV ͑620 nm͒, ͑ii͒ at about 2.2 eV ͑564 nm͒, and ͑iii͒ from 2.4 eV ͑517 nm͒ to 2.8 eV ͑443 nm͒. [27][28][29] The peak positions of the emission bands obtained from the MLs ͑full symbols͒ and the silica layers ͑open symbols͒ have been plotted in Fig. 7 as a function of the annealing temperature, T A .…”

Section: B Annealing Treatmentmentioning

confidence: 99%

Silicon-rich SiO2/SiO2 multilayers: A promising material for the third generation of solar cell

Gourbilleau

Ternon

Maestre

et al. 2009

Journal of Applied Physics

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Method for fabricating third generation photovoltaic cells based on Si quantum dots using ion implantation into SiO2 J. Appl. Phys. 109, 084337 (2011) Si-rich-SiO 2 ͑SRSO͒ / SiO 2 multilayers ͑MLs͒ have been grown by reactive magnetron sputtering. The presence of silicon nanoclusters ͑Si-ncls͒ within the SRSO sublayer and annealing temperature influence optical absorption as well as photoluminescence. The optimized annealing temperature has been found to be 1100°C, which allows the recovery of defects and thus enhances photoluminescence. Four MLs with Si-ncl size ranging from 1.5 to 8 nm have been annealed using the optimized conditions and then studied by transmission measurements. Optical absorption has been modeled so that a size effect in the linear absorption coefficient ␣ ͑in cm −1 ͒ has been evidenced and correlated with TEM observations. It is demonstrated that amorphous Si-ncl absorption is fourfold higher than that of crystalline Si-ncls.

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Section: B Annealing Treatmentmentioning

confidence: 99%

Silicon-rich SiO2/SiO2 multilayers: A promising material for the third generation of solar cell

Gourbilleau

Ternon

Maestre

et al. 2009

Journal of Applied Physics

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“…For example, lifetimes of a Si lone-pair centers (peak energy: 3.1 eV) [9] and neutral oxygen vacancies (2.7 eV) [10] are 110 µs, 9-10 ms, respectively. The lifetimes of our samples observed at 14 K are much faster than those reported previously.…”

Section: Resultsmentioning

confidence: 99%

Mechanisms of Visible Photoluminescence from Size-Controlled Silicon Nanoparticles

et al. 2002

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We have observed visible photoluminescence (PL) spectra (peak energy: 3.1 eV) of size-controlled silicon (Si) nanoparticles annealed in oxygen gas. The PL peak energy did not depend on the temperature, and the PL lifetime was relatively fast (on the order of nanoseconds). It was inferred that the visible PL was attributed to localized states in the oxidized surfaces of size-controlled Si nanoparticles. We also observed the PL excitation spectra and studied the excitation process. In order to elucidate mechanisms of the visible PL, excitation and recombination processes are discussed.

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“…STE are considered to be an interstitial-vacancy pair, for which the interstitial takes the form of an O 2 molecule. 28 PL at 2.25 eV observed 29 in irradiated bulk a-SiO 2 has been attributed to E ␦ Ј centers, paramagnetic defects where an electron is delocalized over a cluster of five Si atoms. The generation process of oxygen vacancies and interstitials results in a structure quite similar to the five Si atoms cluster.…”

mentioning

confidence: 98%

Defect and nanocrystal cathodoluminescence of synthetic opals infilled with Si and Pt

Dı́az-Guerra

Kurdyukov

Piqueras

et al. 2001

Journal of Applied Physics

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Synthetic opals-composed of 250 nm amorphous silica spheres closed packed in a face centered cubic structure-have been infilled with silicon, platinum, and with Si and different Pt contents. The luminescent properties of these composites have been investigated by cathodoluminescence ͑CL͒ microscopy and spectroscopy. CL emission is influenced by the material used to infill the pores of the opal matrix. CL spectra of all the samples investigated show two well-known bands, associated with the defect structure of the silica spheres, centered at about 1.9 and 2.7 eV, respectively. Emission in the 2.15-2.45 eV range, particularly intense in opal-based composites with a high Pt content, is tentatively associated with SiO 2 defects involving silicon clusters. A CL band peaked at about 3.4 eV as well as a band in the 1.50-1.75 eV range, whose peak position seems to be affected by the Pt content of the samples, are associated with the presence of Si nanocrystals. The behavior of these emissions suggests that both are related to defect states at the interface between Si nanocrystals and SiO 2 forming the opal spheres.

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2.7-eV luminescence in as-manufactured high-purity silica glass

Cited by 255 publications

References 12 publications

Silicon-rich SiO2/SiO2 multilayers: A promising material for the third generation of solar cell

Silicon-rich SiO2/SiO2 multilayers: A promising material for the third generation of solar cell

Mechanisms of Visible Photoluminescence from Size-Controlled Silicon Nanoparticles

Defect and nanocrystal cathodoluminescence of synthetic opals infilled with Si and Pt

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