2.12 μm InGaAs–InGaAlAs–InP diode lasers grown in solid-source molecular-beam epitaxy

Kuang, G.K.; Böhm, G.; Grau, M.; Rosel, G.; Meyer, Ralf; Amann, Markus‐Christian

doi:10.1063/1.1289799

Cited by 20 publications

(5 citation statements)

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“…For wavelengths below 2 mm a homogenous indium composition is chosen for the quantum wells [6]. However, calculations show that the emission wavelength of a quantum well can be significantly increased if the standard rectangular shape of the indium content within the quantum well is changed to a triangular (V-like) one, keeping the average strain constant.…”

Section: Mbe Growthmentioning

confidence: 99%

Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3μm

Boehm

Grau

Dier

et al. 2007

Journal of Crystal Growth

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Section: Mbe Growthmentioning

confidence: 99%

Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3μm

Boehm

Grau

Dier

et al. 2007

Journal of Crystal Growth

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“…The Fabry-Perot (FP) and distributed feedback buried (DFB) devices around 2.07 µm were then demonstrated by NTT's group [28][29][30][31]. After the year 2000, FP and vertical-cavity surfaceemitting lasers (VCSELs) at 2.3 µm were demonstrated by Amann et al using molecular beam epitaxy (MBE) grown InAs-containing triangular QW active region [32][33][34]. Using MOVPE grown 5 nm pure InAs as the QW layer, Mitsuhara et al in NTT's group reported FP and DFB lasers with lasing wavelength at 2.33 µm [35][36][37].…”

Section: Development Of Semiconductor Lasers In the 2-3 µM Bandmentioning

confidence: 99%

InP-Based Antimony-Free MQW Lasers in 2-3 μm Band

Yuan¹,

Zhang²

2015

Optoelectronics - Materials and Devices

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Mid-infrared semiconductor lasers in the wavelength range of 2-3 µm have aroused increasing interests as they are highly desired for a wide range of applications ranging from medical diagnostics to environmental sensing. Access to this wavelength range was mainly achieved by antimony-containing compound semiconductor structures on GaSb substrates. Besides, InP-based In x Ga 1-x As (x>0.53) type-I multiple quantum well laser is a promising antimony-free approach in this band. The emission wavelength can be tailored to the 2-3 µm band by increasing the indium composition in the quantum wells. During the demonstration of this kind of lasers, controlling the strain and keeping fair structural quality is the main obstacle. In this chapter, the route for developing this kind of lasers is reviewed. The schemes of pseudomorphic and metamorphic structures are discussed for the 2-2.5 µm and 2.5-3 µm range, respectively. In the pseudomorphic scheme, triangular quantum wells grown by digital alloy technology are applied to restrict the strain and increase the lasing wavelength. Lasers at 2.43 µm were demonstrated under continuous wave operation at room temperature. To extend the emission wavelength longer, an InPbased metamorphic template with larger lattice constant was produced and InAs quantum wells were then grown. The lasing wavelength was further increased up to 2.71 µm. The details on the gas source molecular beam epitaxial growth, device processing as well as performance characterization are presented.

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“…Compressively strained In(Ga)As quantum well (QW) structures on InP substrate offers an attractive alternative to GaSbbased materials for laser wavelength beyond 2 mm [1][2][3][4][5]. The emission wavelength can be tailored by the In composition of InGaAs QWs, whereas it is really a challenge to extend the wavelength to longer than 2.1 mm due to the significant strain [1,6].…”

Section: Introductionmentioning

confidence: 98%