DOI: 10.1109/isscc.1979.1155941
View full text
R. Stewart, A. Dingwall

Abstract: A 16K STATIC RAM using a high d(.nsity buried-contact C\.lOS/SOS process rvill be described. The process allows dircct connection between the Nf doped polysilicon gate and eithcr of thc N+ or P' doped epitaxial layers. bktal overlay is not re-B IT "JDD LINE 9