150 W GaN-on-Si RF Power Transistor

Nagy, W.; Singhal, Sameer; Borges, R.; Johnson, J. W.; Brown, Jacqueline; Therrien, R.; Chaudhari, A.; Hanson, A.W.; Riddle, J.; Booth, S.; Rajagopal, P.; Piner, Edwin L.; Linthicum, K. J.

doi:10.1109/mwsym.2005.1516635

Cited by 39 publications

(22 citation statements)

References 6 publications

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“…[1][2][3][4][5][6][7][8][9][10] GaN-on-silicon field-effect transistor technology enables base station equipment manufacturers to optimize bandwidth, power, and efficiency at attractive sizes and costs. 9,[11][12][13][14][15] GaN and related alloys are typically grown on either sapphire or SiC substrates. GaN has a significant lattice mismatch with both types of substrates, leading to a high density of threading dislocations in the nitride layer.…”

Section: Introductionmentioning

confidence: 99%

“…[8][9][10][11][12] Because of the lattice mismatch between silicon and GaN, a nucleation layer is required. Previous work has confirmed that GaN HEMTs on silicon can achieve excellent performance and reliability.…”

Section: Introductionmentioning

confidence: 99%

“…Previous work has confirmed that GaN HEMTs on silicon can achieve excellent performance and reliability. [9][10][11][12] However the thermal conductivity of the silicon substrate may not be high enough to withstand very high power density. The use of silicon-on-polycrystalline silicon carbide (SopSiC) is a possible alternative by combining the low-cost approach of the silicon growth template and improved thermal dissipation of the poly-SiC bulk.…”

Section: Introductionmentioning

confidence: 99%

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Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates

Anderson

Ren

Kim

et al. 2007

Journal of Elec Materi

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The radiofrequency (RF) performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on Si-on-poly-SiC (SopSiC) substrates formed by the Smart-Cut TM process is reported. This provides a low-cost, high-thermal-conductivity substrate for power applications. HEMTs with a 0.5 lm gate length show cutoff frequencies (f T ) of 18 to 27 GHz for gate-to-drain distances of 3 to 32 lm and a maximum frequency of oscillation (f max ) of 43 to 47 GHz. The f max values are slightly lower than comparable devices on sapphire, SiC or Si alone. This approach looks promising for applications requiring cheap large-area substrates and better thermal management than provided by pure Si substrates alone.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates

Anderson

Ren

Kim

et al. 2007

Journal of Elec Materi

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“…Microstrip line X-frequency band power amplifiers provide pulsed output power levels of 10 W with 16 dB of gain at 9 GHz. This work further shows improved device reliability results at VDS= 30 V and 200• C channel temperature for gate lengths of 300 nm.1 Introduction GaN/AlGaN High Electron Mobility Transistors (HEMTs) on different substrates are currently in a phase of integration into applications and systems [1][2][3]. Inherent advantages of GaN/ AlGaN HEMT amplifiers repeatedly mentioned are high relative bandwidth and high output power levels [6][7][8], while reliability remains a strong issue.…”

mentioning

confidence: 99%

GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate

Quay

Raay

Reiner

et al. 2006

Phys. Status Solidi (c)

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This work presents very recent examples for the realization of high-power amplifiers for both communication and solid-state radar applications based on AlGaN/GaN HEMTs on s.i. SiC substrate. Broadband power amplifiers for mobile communication base stations between 0.9 and 2.7 GHz are presented. Microstrip line X-frequency band power amplifiers provide pulsed output power levels of 10 W with 16 dB of gain at 9 GHz. This work further shows improved device reliability results at V(ind DS) = 30 V and 200 °C channel temperature for gate lengths of 300 nm

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“…Serious limitations of Si LDMOS technology have been shown however, especially for the next generation communications standards, which require higher power and operating voltage levels and significantly improved linearity. GaN based devices have the potential of delivering RF signals with significant improved linearity [3,4]. Up to now, and also for the foreseeable future [5] no GaN or AlN substrates are commercially available in practical sizes.…”

mentioning

confidence: 99%

AlGaN/GaN HFETs on 100 mm Silicon Substrates for Commercial Wireless Applications

Vescan¹,

Brown²,

Johnson³

et al. 2002

phys. stat. sol. (c)

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PACS : 68.55.Jk; 78.55.Cr; 85.30.Tv GaN grown on Si is currently the only pathway towards high volume manufacturing of GaN based RF devices. In this paper we present the technological status of GaN grown on 100 mm Si substrates. Optimised growth, accounting for the lattice and thermal coefficient of expansion mismatch results in device quality GaN layers that exhibit excellent uniformity over the 100 mm Si substrate. The electrical characteristics of the fabricated devices reflect the high quality of the layers, leading to saturated power levels of 3.3 W/mm, the highest power densities reported to date for GaN on Si. Large periphery devices are shown to achieve up to 27 W of output power.Introduction The outstanding potential of group III-nitride heterostructure FETs has been repeatedly demonstrated in a wide frequency range, showing a tenfold improvement over "conventional" semiconductors like Si or GaAs in terms of power density [1,2]. This performance is mainly due to the ability of GaN based devices to operate at high drain voltages while simultaneously yielding high two-dimensional electron gas (2DEG) carrier densities.Currently, base station power amplifiers for wireless communication at L-band are being driven by Si-based LDMOS transistors. Serious limitations of Si LDMOS technology have been shown however, especially for the next generation communications standards, which require higher power and operating voltage levels and significantly improved linearity. GaN based devices have the potential of delivering RF signals with significant improved linearity [3,4]. Up to now, and also for the foreseeable future [5] no GaN or AlN substrates are commercially available in practical sizes. Therefore, the majority of results have been achieved on sapphire or SiC substrates, where epitaxial growth techniques have been developed to address the challenge of the large lattice mismatch.The commercial success of GaN-based RF devices is going to be dependant on manufacturability details, such as backside processing capability, thermal conductivity, substrate resistivity, defects, and most importantly the size and price of the substrate. In this presentation we will demonstrate the viability of GaN on Si, offering a low cost large area technology, hence opening the pathway for commercial application of GaN-RF devices.

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150 W GaN-on-Si RF Power Transistor

Cited by 39 publications

References 6 publications

Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates

Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates

GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate

AlGaN/GaN HFETs on 100 mm Silicon Substrates for Commercial Wireless Applications

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