Study on the annealing-dependent photoluminescence properties of SnO2 cluster-system structures

Abstract

KEYWORDS SnO2 cluster-system structures were synthesized via a two-step temperature-rising thermal evaporation method with short oxidation time. Field emission scanning electron microscopy, X-ray diffraction and transmission electron microscopy were used to characterize the morphological and structural feature of the product as nanowire cluster and nanoparticle cluster. The photoluminescence spectra exhibit that, as annealing time in air increases, the intensity of the newly found strong ultra-violet emission decreases while the green emission is increased. Raman spectrum and X-ray photoelectron spectroscopy investigations reveal that the relatively decreasing intensity was dominated by the increasing oxygen vacancy. Further calculation based on the SnO2 crystal lattices with H2O molecules at different steps in evaporation process was performed. The result of this calculation confirms that, rather than the influence of H2O molecules from air, the decreasing intensity is the result of the combined action of the formation of oxygen vacancy and the energetic oxygen compensation in annealing treatment. SnO2 cluster-system Thermal evaporation Photoluminescence Oxygen vacancy Bound H2O molecule Energy minimization computation

Photostable Zn2SnO4 Nanowire Transistors for Transparent Displays

“…The peak at 382 nm is assumed to be generated below the shallow band of tetragonal SnO 2 . 19 The yellow emission at 610 nm is attributed to defect levels in the band gap of SnO 2 , which seem to have originated from defects during the growth phase. 20,21 As shown in Figure 2c, the main XRD peaks for Zn 2 SnO 4 are at (220) and (311), and the growth shows a cubic structure with a lattice constant a = 8.65 Å (ICDD No.…”

“…In the PL spectrum (Figure e), UV emission at 382 nm and strong, broad yellow emission at 610 nm are observed. The peak at 382 nm is assumed to be generated below the shallow band of tetragonal SnO 2 . The yellow emission at 610 nm is attributed to defect levels in the band gap of SnO 2 , which seem to have originated from defects during the growth phase. , …”

Effect of Zn doping on structural, optical and thermal properties of CeO2 nanoparticles

“…The 482 nm band is relatively common for semiconductor oxides like M In 2 O 4 (M= Ca, Sr, Ba) or SnO 2 [38,39] confirming that it is caused by the oxygen related defects [40,41].…”

Synthesis and Characterization of Thin Nanostructured Bismuth Doped Tin Oxide Films and Sensing Studies

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